Identification of the dynamics of plasma‐induced damage in a CuInSe2 thin film by fractal processing

A planar ionization system for rapid visualization and recording the resistance inhomogeneity and photoconductivity distribution in a chalcopyrite‐type semiconductor (CuInSe₂) copper‐indium‐diselenide film is studied. A part of the discharge energy is transferred to the electrodes of the system by the bombardment of the electrode surface due to an electron‐ion flow. This process leads to the sputtering mechanism of the electrode surface material. It is shown that the plasma‐induced damage (PID) in a CuInSe₂ thin film was primarily due to the effectiveness of sputtering and physico‐chemical interactions in the discharge gap during the transition from Townsend to the glow type. At the same time a nondestructive method is suggested for the analysis of the dynamics of PID in the CuInSe₂ thin film by fractal processing in the planar ionization system. Some properties of the device have been evaluated, such as a relative change of the resistance inhomogeneity is determined by a relative change of discharge light emission (DLE) intensity when a current is passed through an ionization cell. For the quantitative analysis of the change in the dynamic feature of PID of CuInSe₂ thin films, fractal dimension analysis was used following the records of the DLE intensity. The quality of the film was analyzed using both the profile and spatial distributed DLE intensities data showing the surface inhomogeneity and damage in the thin film as function of time. Thus, by using fractal concept, the order of the surface damage and the quality of the CuInSe₂ as function of time can be assessed exactly and the size and location of the surface inhomogeneities in thin film to be ascertained. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical instability in a semiconductor gas discharge system

Electrical instability in a SI GaAs plates of the semiconductor gas discharge gap system (SGDGS) is studied experimentally in a wide range of the gas pressures, interelectrode distances and different diameters of the cathode areas. While being driven with a stationary voltage, it generates current and discharge light emission (DLE) instabilities with different amplitudes of the oscillation. It is shown that under the experimental conditions the interelectrode distance played only a passive role and was not responsible for the appearance of the DLE instability. At the same time for different diameters D of the GaAs plate areas the expanded range of current and DLE oscillations are observed. SGDGS with an N‐shaped CVC was analyzed using both the current and DLE data showing the electrical instability in the GaAs cathode. It was found that application of high feeding voltage to this cathode give rise to non‐uniform spatial distribution of the DLE, which disturbed the operation of the system. The experiment presents also a new metod to study and visualization of the electrical instabilities in high‐resistivity GaAs plates of large diameter. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and downconversion luminescence of Ho3+/Yb3+ codoped α‐NaYF4 single crystals by the Bridgman method using a KF flux

Downconversion (DC) luminescence with emission at about 1000 nm under excitation of 448‐nm light in Ho³⁺/Yb³⁺ codoped α‐NaYF₄ single crystal is realized. The crystal was grown by the Bridgman method using KF as an assisting flux in a NaF‐YF₃ system. The energy‐transfer process and quantum cutting (QC) mechanisms are presented through the analysis of the spectra. The energy‐transfer processes of first‐ and second‐order cooperative DC are responsible for the increase of the emission intensity at 1000 nm, and it is the first‐order cooperative DC that is dominant for the DC process. When the Ho³⁺ concentration is fixed at about 0.8 mol%, the optimal concentration for ∼1000 nm emission is 3.02 mol% Yb³⁺ in the current research. The energy‐transfer efficiency and the total quantum efficiency are analyzed through the luminescence decay curves. The maximum quantum cutting efficiency approaches to 184.4% in α‐NaYF₄ single crystals of 0.799 mol% Ho³⁺ and 15.15 mol% Yb³⁺. However, the emission intensity at 1000 nm decreases while the energy‐transfer efficiency from Ho³⁺ to Yb³⁺ increases, which may result from the fluorescence quenching between Ho³⁺ and Yb³⁺ ions, Yb³⁺ and Yb³⁺ ions.     

Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities

The photoluminescence (PL) emission from an epi‐structure containing an atomically ordered GaInP₂ layer and a GaAs layer was studied under excitation power densities of 0.03 – 3 W/cm²at temperatures of 10 to 300 K. The quenching of the integrated PL intensity from both: the GaInP₂and the GaAs layers is stronger under low excitation, than under high excitation density. The temperature dependence, however, have different shapes being the PL decay observed for the GaInP₂ layer stronger than that for the GaAs layer. Comparing the temperature dependence of the PL intensity from the ordered GaInP₂ and the GaAs layers under different excitation densities and analyzing them together, we conclude that the inhomogeneity of the ordered layer is responsible for the different temperature behavior of the GaInP₂ alloy PL emission. To explain the experimentally observed PL intensity temperature dependence an additional nonradiative recombination mechanism due to a thermally activated escape of the carriers from its confinement within regions of lower bandgap has to be taken into account. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization

High quality single crystals of ternary AgGaS₂ (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder X‐ray diffraction and single crystal X‐ray diffraction studies indicate that the as‐grown AGS crystals belong to the tetragonal (chalcopyrite) system with (112) plane as the dominant peak. The full width at half maximum (FWHM) of the X‐ray rocking curve for the as‐grown AGS single crystal is 5 arcsec. The energy dispersive X‐ray analysis (EDAX) and optical transmission spectra of as‐grown AGS single crystals grown at different conditions show the almost same composition and band gap (2.65 eV). Photoluminescence (PL) spectra of as‐grown AGS single crystals show prominent band edge emission at 2.61 eV. The resistivity of the as‐grown AGS single crystal has been measured. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and optical response of 2‐Mercaptoethonal capped CdS nanocrystals to Fe3+ ions

Cadmium sulfide (CdS) semiconductor nanocrystals (NCs) doped with Fe³⁺ have been synthesized via a solution‐based method utilizing dopant concentrations of (0–5%) and employing 2‐mercaptoehonal as a capping agent. X‐ray diffraction (XRD) results showed that the undoped CdS NCs are in mixed phase of cubic and hexagonal, where as the doped CdS NCs are in hexagonal phase. The crystallite size was increased from ∼1.2 nm to ∼2 nm. Diffuse reflectance spectroscopy studies (DRS) reveals that the band gap energy was decreased with Fe doping and it lies in the range of 2.58 ‐ 2.88 eV. Photoluminescence (PL) spectra of undoped CdS NCs show a strong green emission peak centered at 530 nm and a weak red emission shoulder positioned at 580 nm. After doping all the luminescence intensity was highly quenched and the green emission peak was shifted to orange region (580 nm), but the position of weak red emission shoulder was unaltered with doping. FTIR studies revealed that the NCs were sterically stabilized by 2‐mercaptoethanol. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Preparation and upconversion luminescence characterization of 12CaO·7Al2O3:Ho3+/Yb3+ polycrystals

The effect of Yb³⁺ concentration on the fluorescence of 12CaO·7 Al₂O₃:Ho³⁺/Yb³⁺ polycrystals is investigated. The Raman spectra of pure C12A7 under 633‐nm excitation show that the highest photon energy is 787.267 cm⁻¹, which is not much bigger than general fluorides, so it can realize high efficiency upconversion. The upconversion emission spectra suggest that the green upconversion emission centered at 548 nm and the red upconversion emission at 662 nm correspond to the ⁵F₄/⁵S₂→⁵I₈ and ⁵F₅→⁵I₈ transition of Ho³⁺ ions, respectively. The intensity of the upconversion luminescence and the ratio of red to green are changed with Yb³⁺ ion concentration. The pump dependence and luminescence decay dynamics spectra show the green and red upconversion emissions are populated by a two‐photon process, and the upconversion mechanisms are analyzed. The relative luminous efficiencies of green and red emissions are 2.035% and 0.7%, respectively. The normalized efficiency obtained for green emission of Ho³⁺ at RT when the sample is excited by 980‐nm light with an absorbed intensity of 7.5 W/cm² is 0.27 cm²/W. This result is comparable to the values obtained in YF₃ for the Yb³⁺, Er³⁺ green emission. The C12A7 with upconversion red and green light will be a promising luminous material.     

Electrical properties of nitrogen implanted GaSe single crystal

N‐implantation to GaSe single crystals was carried out perpendicular to c‐axis with ion beam of 6 × 10¹⁵ ions/cm² dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100‐320 K. It was observed that N‐implantation decreases the resistivity values down to 10³ Ω‐cm depending on the annealing temperature, from the room temperature resistivity values of as‐grown samples lying in the range 10⁶‐10⁷ Ω‐cm. The temperature dependent conductivities exhibits two regions (100‐190 and 200‐320 K) with the activation energies of 234‐267 meV and 26‐74 meV, for the annealing temperatures of 500 and 700 °C, respectively. The temperature dependence of Hall mobility for the sample annealed at 500 °C shows abrupt increase and decrease as the ambient temperature increases. The analysis of the mobility‐temperature dependence in the studied temperature range showed that impurity scattering and lattice scattering mechanisms are effective at different temperature regions with high temperature exponent. Annealing of the samples at 700 °C shifted impurity scattering mechanism toward higher temperature regions. In order to obtain the information about the defect produced by N‐implantation, the carrier density was analyzed by using single donor‐single acceptor model. We found acceptor ionization energy as E_a = 450 meV, and acceptor and donor concentration as 1.3 × 10¹³ and N_d = 3.5 × 10¹⁰ cm⁻³, respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of Er3+ doping concentration and calcination on fluorescence properties of La3Ga5.5Nb0.5O14 nanocrystals

The effects of Er³⁺ doping concentration and calcination were examined on the fluorescence properties of La₃Ga_5.5Nb_0.5O₁₄ (Er:LGN) nanoparticles for the first time. High quality Er:LGN nanoparticles were synthesized by sol‐gel method. The room temperature fluorescence spectra showed a green emission, which can be attributed to ²H_11/2‐⁴I_15/2 and ⁴S_3/2‐⁴I_15/2 transition. The relationship between the relative emission intensity and the doping concentration was investigated. The maximum of the Er³⁺ doping concentration in LGN nanopowders is 2.0%. The fluorescent lifetime of 2.0% Er:LGN nanoparticles is 1.45ns. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Production of CN(BΣ) state from dissociative excitation reaction of BrCN with microwave discharge flow of Ar

The mechanism of the dissociative excitation reaction of BrCN with the microwave discharge flow of Ar was investigated based on the CN(B²Σ⁺-X²Σ⁺) emission-spectroscopic and the electrostatic-probe measurements. By passing Ar and BrCN through P₂O₅, the contamination of H₂O molecules into the reaction region was reduced to ≈30%, being confirmed by monitoring the reduction of the OH(A²Σ⁺-X²Π) emission intensity. The variation of the CN(B²Σ⁺-X²Σ⁺) emission intensity on the pressure of Ar, P_Ar, of 0.1-0.3 Torr was compared with that of the density of electrons whose kinetic energy was lower than the ionization energy of BrCN, 11.9 eV. The dissociation of BrCN was found to proceed predominantly via the charge transfer from Ar⁺ followed by the BrCN⁺ − e⁻ recombination. When the contamination of H₂O molecules in the reaction region was not reduced, the dissociation via the energy transfer from metastable Ar atoms became significant. The present study shows that the contamination of H₂O molecules in the reaction system makes significant effect onto the gas-phase plasma process.     

Properties of Sm‐doped CaNb2O6 thin films deposited by radio‐frequency magnetron sputtering

Sm‐doped CaNb₂O₆ (CaNb₂O₆:Sm) phosphor thin films were prepared by radio‐frequency magnetron sputtering on sapphire substrates. The thin films were grown at several growth temperatures and subsequently annealed at 800 °C in air. The crystallinity, surface morphology, optical transmittance, and photoluminescence of the thin films were investigated by X‐ray diffraction, scanning electron microscopy, ultraviolet‐visible spectrophotometry, and fluorescence spectrophotometry, respectively. All of the thin films showed a main red emission radiated by the transition from the ⁴G_5/2 excited state to the ⁶H_9/2 ground state of the Sm³⁺ ions and several weak bands under ultraviolet excitation with a 279 nm wavelength. The optimum growth temperature for depositing the high‐quality CaNb₂O₆:Sm thin films, which was determined from the luminescence intensity, was found to be 400 °C, where the thin film exhibited an orthorhombic structure with a thickness of 370 nm, an average grain size of 220 nm, a band gap energy of 3.99 eV, and an average optical transmittance of 85.9%. These results indicate that the growth temperature plays an important role in controlling the emission intensity and optical band gap energy of CaNb₂O₆:Sm thin films.     

Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals

Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150‐400 K on n‐type GaS_0.5Se_0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4 ×10¹⁷ and 4.1×10¹⁶ cm^‐3, respectively, and an electron effective mass of 0.41 m₀. The Hall mobility is limited by the electron‐phonon short‐range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron‐phonon short‐range interactions scattering mobility analysis reveals an electron‐phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Å.     

Crystal data and some physical properties of Tl2InGaTe4 crystals

The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl₂InGaTe₄ crystals are reported for the first time. The X‐ray diffraction technique has revealed that Tl₂InGaTe₄ is a single phase crystal of tetragonal body‐centered structure belonging to the space group. A Debye temperature of 124 K is calculated from the results of the X‐ray data. The current‐voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n ‐type conduction with an electrical resistivity, electron density and Hall mobility of 2.49×10³ Ω cm, 4.76×10¹² cm^–3 and 527 cm²V^–1s^–1, respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 eV. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

New Simple Model of a Liquid Crystal Light Valve

Abstract

A liquid crystal light valve, using a heterojunction indium oxide/silicon of high resistivity (10,000 Ω.cm) and based on the cholesteric-nematic transition is described. The characteristics of this device are determined: optimum voltage to be applied to the cell in order to produce the cholestericnematic phase change, incident light power sensitivity, spectral response, rise and decay times. It has been shown that this light valve has an incident power sensitivity of less than 10 μW.cm^?2 which passes through a maximum for an incident wavelength of 0.8 μm. This valve can be used in the near infrared; rise times of a few tens of ms are obtained.     

High temperature arsenic doping of CdHgTe epitaxial layers

Experimental results on solid‐state arsenic doping of the n‐type bulk and ISOVPE epitaxial Cd_XHg_1‐XTe (X = 0.19 ÷ 0.3) alloys are presented. The arsenic doped thin epitaxial Cd_xHg_1‐xTe films (n_As ≈ 5 · 10¹⁶ ÷ 1 · 10²⁰ cm^‐3; d = 2 ÷ 5 μm) obtained by RF sputtering in a mercury glow discharge were used as As diffusion sources. The arsenic diffusion and activation were carried out at temperatures T = 500 ÷ 600 °C under Hg vapour pressure. Immediately after the high temperature treatment all samples were annealed to annihilate point defects. The SIMS analysis was used for determination of the quantitative admixture distribution of As in the diffusion area. The arsenic electrical activity has been evaluated by means of differential Hall, resistivity and thermoemf measurements. The analysis of experimental data obtained as well as their comparison with previously obtained results has been performed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of photonic excitations on the electrical parameters of TlInS2 crystals

The photo‐excitation effect on the current transport mechanism in TlInS₂ crystals has been studied by means of dark and illuminated conductivity measurements. The temperature‐dependent electrical conductivity analysis in the temperature region of 110‐340 K revealed the domination of the thermionic emission and the thermally assisted variable range hopping (VRH) of charge carriers above and below 160 K, respectively. Above 160 K, the conductivity activation energies in the dark are found to be 0.28 and 0.15 eV in the temperature regions of 340‐240 K and 230‐160 K, respectively. In the temperature region of 110‐150 K, the dark variable range hopping analysis revealed a density of localized states of 1.99×10²² cm^–3eV^–1, an average hopping distance of 0.53 nm and an average hopping energy of 79.65 meV. When the sample was photo‐excited, the values of the conductivity activation energies, the density of localized states near the Fermi level and the average hopping energy were observed to decrease sharply with increasing illumination intensity. On the other hand, the average hopping distance increased with rising illumination intensity. Such behaviours were attributed to the Fermi level shift and/or trap density reduction by electron‐hole recombination. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Luminescence of GaN single crystals prepared by heating a Ga melt in Na–N2 atmosphere

Colorless transparent prismatic crystals (0.5‐2.0 mm long) and hopper crystals (1.0‐2.5 mm long) of GaN were prepared by heating a Ga melt at 800°C in Na vapor under N₂ pressures of 7.0 MPa for 300 h. The photoluminescence (PL) spectrum of a prismatic crystal at 4 K showed the emission peaks of neutral donor‐bound exciton (D⁰‐X) and free exciton (X_A) at 3.472 eV and 3.478 eV, respectively, in the near band edge region. The full‐width at half‐maximum (FWHM) of (D⁰‐X) peak was 1.9 meV. The emission peaks of a donor–acceptor pair transition (D⁰‐A⁰) and its phonon replicas were observed in a lower energy range (2.9‐3.3 eV). The emission peaks of the D⁰‐A⁰ and phonon replicas were also observed in the cathodoluminescence (CL) spectrum at 20 K. The (D⁰‐X) PL peak of a hopper crystal at 4 K was at 3.474 eV (2.1 meV higher), having a FWHM of 6.1 meV which was over 3 times larger than that of the prismatic crystal. A strong broad band with a maximum intensity around 1.96 eV was observed for the hopper crystals in the CL spectrum at room temperature. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Infrared photoluminescence from TlGaS2 layered single crystals

Photolimuniscence (PL) spectra of TlGaS₂ layered crystals were studied in the wavelength region 500‐1400 nm and in the temperature range 15‐115 K. We observed three broad bands centered at 568 nm (A‐band), 718 nm (B‐band) and 1102 nm (C‐band) in the PL spectrum. The observed bands have half‐widths of 0.221, 0.258 and 0.067 eV for A‐, B‐, and C‐bands, respectively. The increase of the emission band half‐width, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature are explained using the configuration coordinate model. We have also studied the variations of emission band intensity versus excitation laser intensity in the range from 0.4 to 19.5 W cm^‐2. The proposed energy‐level diagram allows us to interpret the recombination processes in TlGaS₂ crystals. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Single‐crystalline gold microplates grown on substrates by solution‐phase synthesis

Chemically synthesized single‐crystalline gold microplates have been attracting increasing interest because of their potential as high‐quality gold films for nanotechnology. We present the growth of tens of nanometers thick and tens of micrometers large single‐crystalline gold plates directly on solid substrates by solution‐phase synthesis. Compared to microplates deposited on substrates from dispersion phase, substrate‐grown plates exhibit significantly higher quality by avoiding severe small‐particle contamination and aggregation. Substrate‐grown gold plates also open new perspectives to study the growth mechanism via step‐growth and observation cycles of a large number of individual plates. Growth models are proposed to interpret the evolution of thickness, area and shape of the plates. It is found that the plate surface remains smooth after regrowth, implying the applicability of regrowth for producing giant plates as well as unique single‐crystalline nano‐structures.     

Band tail conduction in Zn-doped GaAs

The electrical parameters of Zn-doped GaAs liquid phase epitaxial layers are determined in the temperature range from 77 to 300 K by Hall effect and resistivity measurements. An analysis of the experimental data yields an ionization energy of 30.4 meV for the Zn acceptor in GaAs in the dilute limit of acceptor concentration. For the Mott transition a critical hole concentration of about 6 · 10¹⁷ cm⁻³ is estimated. It is found that the temperature dependence of the electrical parameters is essentially influenced by band tail conduction effects at doping levels above the Mott transition.