Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1‐x) mixed crystals (0.25 ≤ x ≤ 1)

The optical properties of the TlInS_2xSe_2(1‐x)mixed crystals (0.25 ≤ x ≤ 1) have been investigated through the transmission and reflection measurements in the wavelength range of 400–1100 nm. The optical indirect band gap energies were determined by means of the analysis of the absorption data. It was found that the energy band gaps decrease with the increase of selenium atoms content in the TlInS_2xSe_2(1‐x)mixed crystals. The transmission measurements carried out in the temperature range of 10–300 K revealed that the rates of change of the indirect band gaps with temperature are γ = –9.2×10^–4 eV/K, –6.1×10^–4 eV/K, –4.7×10^–4 eV/K and –5.6×10^–4 eV/K for TlInS₂, TlInS_1.5Se_0.5, TlInSSe and TlInS_0.5Se_1.5 crystals, respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS2xSe2(1‐x) (0.25 ≤ x ≤ 1) layered mixed crystals

The optical properties of TlInS_2xSe_2(1‐x)mixed crystals (0.25 ≤ x ≤ 1) have been studied at room temperature through the transmittance and reflectivity measurements in the wavelength range of 400–1100 nm. The spectral dependence of the refractive index for all compositions of studied crystals were obtained. The dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single‐effective‐oscillator model. The compositional dependencies of refractive index dispersion parameters: oscillator energy, dispersion energy and zero‐frequency refractive index were revealed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of indium intercalation on various properties of MoSe2 single crystals

Indium intercalated MoSe₂ single crystals i.e. In_xMoSe₂ (0 ≤ x ≤ 1) are grown by direct vapour transport technique. These crystals are structurally characterized by X‐ray diffraction, by determining their lattice parameters ‘a’ and ‘c’ and X‐ray density. The Hall effect and thermoelectric power measurements shows that In_xMoSe₂ (0 ≤ x ≤ 1) are p‐type in nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dislocation and microindentation analysis of vapour grown Bi2Te3‐xSex whiskers

The structural defects and microhardness of Bi₂Te_3‐xSe_x whiskers (x = 0, 0.2 and 0.4 at% Se) grown by physical vapour deposition (PVD) method have been investigated. Concentric pairs of dislocation loops were observed on the as‐grown surfaces of short hexagonal prisms. A systematic study of dislocations in these crystals was carried out by chemical etching technique. The effects of Se doping, annealing and quenching on the mechanical properties have also been studied on the prism faces of Bi₂Te_3‐xSe_x whiskers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of crystal disorder on linewidth of the Raman modes in GaS1‐xSex layered mixed crystals

The linewidths of Raman‐active intralayer compressional modes in GaS_1‐xSe_x layered mixed crystals (0 ≤ x ≤ 1) have been measured in the 10‐300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three‐phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of the intralayer phonon lines with temperature. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Lithium Intercalation into the Tetradymite-type Selenides Sulfides Bi2Se3-xSx

The reaction rate of Li intercalation into Bi₂Se_3−xS_x single crystals (x = 0, 0.025 and 0.05) increases with an increasing sulfur content in the crystals. This effect has been explained qualitatively by a change in the bond polarity in the Bi₂Se₃ due to the substitution of selenium atoms by sulfur atoms. This substitution results in a change in the electron density distribution and thus also in the width of the van der Waals gap between the structural layers, responsible for the course of intercalation. This explanation is supported by a quantum-chemical calculation of the charges on the atoms of the Bi₂Se_3−xS_x lattice manifesting and increase in the negative charge on Se atoms with an increasing value of x.     

Growth,structure and thermal properties of CuAlxGa1‐xSe2 alloys

Ingots of the CuAl_xGa_1‐xSe₂ (0 ≤ x ≤ 1) alloys system were prepared by direct fusion of the stoichiometric mixture of the elements. The analysis of X‐ray Powder Diffraction data showed the presence of one single phase with chalcopyrite tetragonal structure at room temperature for all the studied compositions. The lattice parameters, a and c, and the bond lengths were calculated. The phase transition temperatures were obtained by the onset method from Differential Thermal Analysis measurements performed on samples sealed in evacuated quartz ampoules. Fusion or transition enthalpies were determined from the area of the corresponding DTA peak. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical Properties of Bi2Se3‐xAsx Single Crystals

Bi₂Se_3‐xAs_x single crystals with the As content of c_As = 0 to 2.0x10¹⁹ atoms/cm³ prepared from the elements of 5N purity by means of a modified Bridgman method were characterized by measurements of infrared reflectance and transmittance. Values of the plasma resonance frequency omega_p, optical relaxation time tau, and high‐frequency permittivity were determined by fitting the Drude‐Zener formulas to the reflectance spectra. It was found that the substitution of As atoms for Se atoms in the Bi₂Se₃ crystal lattice leads to a decrease in the omega_p values. This effect is accounted for by a model of point defects in the crystal lattice of Bi₂Se_3‐xAs_x. The dependences of the absorption coefficient K on the energy of incident photons were determined from the transmittance spectra. The optical width of the energy gap is found to decrease with increasing As content. The values of the exponent b from the relation of K ∼ lamda^b for the long‐wavelength absorption edge range within the interval 2.0 to 2.3, i.e. the dominant scattering mechanism of free current carriers in Bi₂Se_3‐xAs_x crystals is the scattering by acoustic phonons.     

Growth,structure, and superconducting properties of Bi2Sr2Ca2Cu3O10 and (Bi,Pb)2Sr2Ca2Cu3O10‐y crystals

Large and high‐quality single crystals of both Pb‐free and Pb‐doped high temperature superconducting compounds (Bi_1‐xPb_x)₂Sr₂Ca₂Cu₃O_10‐y (x = 0 and 0.3) were grown by means of a newly developed “Vapour‐Assisted Travelling Floating Zone” technique (VA‐TSFZ). This modified zone‐melting technique was realised in an image furnace and allowed for the first time to grow Pb‐doped crystals by compensating for the Pb losses occurring at high temperature. Crystals up to 3×2×0.1 mm³ were successfully grown. Post‐annealing under high pressure of O₂ (up to 10 MPa at T = 500°C) was undertaken to enhance T_c and improve the homogeneity of the crystals. Structural characterisation was performed by single‐crystal X‐ray diffraction (XRD) and the structure of the 3‐layer Bi‐based superconducting compound was refined for the first time. Structure refinement showed an incommensurate superlattice in the Pb‐free crystals. The space group is orthorhombic, A2aa, with cell parameters a = 27.105(4) Å, b = 5.4133(6) Å and c = 37.009(7) Å. Superconducting studies were carried out by A.C. and D.C. magnetic measurements. Very sharp superconducting transitions were obtained in both kinds of crystals (ΔT_c ≤ 1 K). In optimally doped Pb‐free crystals, critical temperatures up to 111 K were measured. Magnetic critical current densities of 2�10⁵ A/cm² were measured at T = 30 K and μ₀H = 0 T. A weak second peak in the magnetisation loops was observed in the temperature range 40‐50 K above which the vortex lattice becomes entangled. We have measured a portion of the irreversibility line (0.1‐5 Tesla) and fitted the expression for the melting of a vortex glass in a 2D fluctuation regime to the experimental data. Measurements of the lower critical field allowed to obtain the dependence of the penetration depth on temperature: the linear dependence of λ(T) for T < 30 K is consistent with d‐wave superconductivity in Bi‐2223. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Twin Structure of (La,Nd)GaO3 Solid Solutions

For La_1‐xNd_xGaO₃ crystals the La‐Nd substitution leads to decrease of spontaneous strains and for composition with x≈0.32 the six possible twin states of orthorhombic phase (m3mFmmm) may be degenerated in three twin states inhered in m3mF4/mmm species when a distorted perovskite pseudocell becomes tetragonal. The {110} and {112} reflection twins and axial twins with compositional planes close to (211) and (21‐1) (S‐walls) were identified in La_1‐xNd_xGaO₃ (x=0.07, 0.12, 0.20) solid solutions crystals. All observed twins are typical for crystals with GdFeO₃ type perovskite‐like structure. It has been shown that for x≤0.2 and x≥0.5 orientations of S‐walls weakly depend on La/Nd ratio, whereas in the range of 0.2<x<0.5 they depend strongly on the solid solution composition. The tilt angle between two twin states across twin boundary in La_1‐xNd_xGaO₃ (x<0.6) solid solutions is smaller than that between two twins in pure LaGaO₃ or NdGaO₃.     

Properties of AgGa1‐xInxSe2 single crystals grown by Bridgman method

High‐pure and single‐phase AgGa_1‐xIn_xSe₂ (x=0.2) polycrystalline was synthesized by the mechanical and temperature oscillation method. Adopting the modified Bridgman method an integral AgGa_1‐xIn_xSe₂ single crystal with diameter of 14 mm and length of 35 mm has been obtained at the rate of 6 mm/day. It was found that there is a new cleavage face which was (101), and observed the four order X‐ray spectrum of the {101} faces. By the method of DSC analysis the melting and freezing points of the AgGa_1‐xIn_xSe₂ (x=0.2) single crystal were about 828°C and 790°C. The transmission spectra of the AgGa_1‐xIn_xSe₂ (x=0.2) sample of 5×6×2 mm³ were obtained by means of UV and IR spectrophotometer. The limiting frequency was 774.316nm and the band gap was 1.6eV. It can be found in the infrared spectrum that the infrared transmission was above 60% from 4000cm^‐1 to 600cm^‐1. The value of α in 5.3µm and 10.6µm were 0.022cm^‐1 and 0.1cm^‐1 respectively. All results showed that the crystal was of good quality. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Composition Dependency of Lattice Anisotropy of TlBX2‐type Chain Mixed Crystals

Variation of the lattice parameters of TlTl_1‐xIn_xSe₂ chain mixed crystals with composition have been studied by X‐ray diffraction technique. The lattice anisotropy ( c/a ) of the TlBX₂‐type mixed crystals changes linearly with substitution of the atoms located both at the center and at the vertices of the BX4 tetrahedra. A brief survey of the important features of the effect of isomorphic atom substitution on the lattice anisotropy of TlBX₂‐type mixed crystals with chain structure has been presented.     

Effect of Pb on the properties of Sr2YRu1‐xCuxO6 crystals grown from PbO‐PbF2 solutions at high temperatures

Single crystals of Sr₂YRu_1‐xCu_xO₆ with x=0 and x=0.1 were grown using PbO‐PbF₂ based solutions at different temperatures in the range 1150–1350°C. The influence of Pb from the solutions and the Cu from the solid solutions of Sr₂YRu_1‐xCu_xO₆ on the resulting crystals was studied using microstructure and magnetic property measurements. The peaks in the powder X‐ray diffraction patterns and Raman spectra do not change in the case of x=0 crystals but shift in the presence of Cu. A diamagnetic transition indicative of superconductivity was observed in the presence of Cu and an antiferromagnetic behavior with x=0. Based on these results it is concluded that Pb may not be incorporated in the crystals and even if it does the influence is not observed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth of zirconium‐doped KTiOPO4 crystals in the K2O‐P2O5‐TiO2‐ZrF4 system

Zirconium‐doped KTiOPO₄ (KTP) crystals were grown using a high temperature flux method in the K₂O‐P₂O₅‐TiO₂‐ZrF₄ system. The dopant content in the single crystals with general composition KTi_1‐xZr_xOPO₄ (where x = 0 – 0.026) strongly depends on zirconium concentration in the homogeneous melts. AES‐ICP method and X‐ray fluorescence analysis were used to determine the composition of the obtained crystals. Phase analyses of the products were performed using the powder XRD. The structures of KTiOPO₄ containing different quantities of Zr were refined on the basis of single crystal XRD data. Applying ZrF₄ precursor for zirconium injection into the flux allowed growing the zirconium‐doped KTP crystals at 930–750°C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth and characterization of the CdGaCrSe(4‐X)S(X) system

Single‐crystal of the CdGaCrSe_(4‐X)S_(X) system (x = 0; 1; 2; 3; 4) were grown by the chemical vapour‐phase transport technique. The crystals were obtaine by using CdCl₂ as transporting agent for the composition with x = 1, and CrCl₃ for those with x = 0; 2; 3 and 4. X‐ray powder diffraction analysis indicated that some of the samples crystallizes in the tetragonal system with space group I‐4 (CdGaCrSe₃S , x = 1; CdGaCrSe₂S₂ , x = 2), or in a cubic system with space group Fd‐3m (CdGaCrSeS₃, x = 3; CdGaCrS₄, x = 4), however the sample of CdGaCrSe₄ (x = 0) crystallizes in rhombohedral system. Magnetic measurements show significant changes in the magnetic interactions behaviour probably due to the anionic substitutions. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and characterization of compounds LixMn1+xFe2–2xO4 with spinel structure in the quasiternary system “LiO0,5 – MnOx – FeOx“

The thermal decomposition of freeze‐dried Li‐Mn(II)‐Fe(III)‐formate precursors was investigated by means of DTA, TG and mass spectroscopy. By the thermal treatment of the prefired precursors between 400 and 1000°C, single phase solid solutions Li_xMn_1+xFe_2–2xO₄ (0 ≤ x ≤ 1) with cubic spinel structure were obtained. To get single phase spinels, special conditions concerning the temperature T and the oxygen partial pressure p(O₂) during the synthesis are required. Because of the high reactivity of the freeze‐dried precursors, in comparison with the conventional solid state reaction, the reaction temperature can be lowered by 200°C. The cation distribution and the properties of the Li‐Mn‐ferrites were studied by chemical analysis, X‐ray powder diffraction and magnetization measurements. It was found that for high substitution rates, almost all lithium occupies the tetrahedral coordinated A‐sites of the spinel lattice AB₂O₄, while at small x‐values, lithium ions are distributed over the tetrahedral and octahedral sites. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and thermal studies on pure ADP,KDP and mixed K1‐x(NH4)xH2PO4 crystals

The investigations on the formation of mixed crystals of ammonium dihydrogen orthophosphate (ADP) and potassium dihydrogen orthophosphate (KDP) i.e. potassium ammonium dihydrogen phosphate, K_1‐x(NH₄)_xH₂PO₄ have been presented in this paper. Pure and mixed crystals of ADP and KDP have been grown by slow evaporation technique from the supersaturated solution at an ambient temperature 26±1 °C for ammonium concentration x in the range 0.0 ≤ x ≤ 1.0 in the case of mixed crystals. Crystal compositions were determined by flame atomic absorption spectroscopy and chemical analysis. The results of the X‐ray analysis of the grown crystals are also reported. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) were used to study the kinetic process of dehydration and the high temperature phase behaviour. DTA showed the distinct thermal events attributed to dehydration of ADP, KDP and K_1‐x(NH₄)_xH₂PO₄. The results of thermal analysis and chemical analysis are consistent with each other. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of big single crystals of a new magnetic superconducting double perovskite Ba2PrRu1–xCuxO6

Single crystals of Ba₂PrRu_1–xCu_xO₆ with x = 0 to 0.2, have been grown from high temperature solutions of a mixture of PbO‐PbF₂ in the temperature range 1100–1200 °C. Thin crystals with mostly a hexagonal and triangular plate like habit measuring up to 1–2 mm across and 0.1–0.2 mm thick were obtained. The size, quality and morphology of the crystals were improved by varying the solution volume as well as additives like B₂O₃. Large crystals measuring up to 3 mm across and 0.3 to 0.5 mm thick were obtained with 5–7 wt% solute concentration and 0.51 wt% of B₂O₃. The ZFC curves exhibit a spin glass like behavior with x = 0 and a superconducting transition at 8 to 11 K depending on x = 0.05 to 0.1. The transition was also influenced by the growth temperature and post growth annealing. Powder x‐ray diffraction, EDS and Raman spectroscopic measurements confirm the presence of Cu in the crystals. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of big single crystals of Sr2YRu1‐xCuxO6 from high temperature solutions

Single crystals of Sr₂YRu_1‐xCu_xO₆ (x = 0 ‐ 0.4) have been grown from PbO‐PbF₂ based solutions in the temperature range 1150 – 1350°C. A silicon carbide heating element furnace (with a recrystallized alumina tube lining) in a vertical configuration was used to grow the crystals in platinum crucibles. Conditions for the stable growth of big crystals have been investigated. The morphology of the crystals containing Cu was found to change from octahedral to cube octahedral as the growth temperature is increased from 1150 to 1350°C. Crystals measuring up to 4.5 mm across and 2.5 mm thick have been grown from 1250°C. The incorporation of Cu into the crystals was ascertained by EDS and x‐ray diffraction analysis. A diamagnetic transition which increased in magnitude and temperature with x was observed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermoelectric properties of Tl‐doped Bi2Se3 single crystals

The single crystals of the ternary system based on Bi_2‐xTl_xSe₃ (nominaly x = 0.0‐0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity σ_⊥c , Hall coefficient R_H (B∥c), and Seebeck coefficient S (ΔT ⊥c). The measurements indicate that by incorporating Tl in Bi₂Se₃ one lowers the concentration of free electrons and enhances their mobility. This effect is explained in terms of the point defects in the crystal lattice – formation of substitutional defects thallium on the site of bismuth Tl_Bi and the decrease of concentration of selenium vacancies V_Se⁺². We also discuss the temperature dependence of the power factor σS² of the samples. Upon the thallium doping we observe a significant increase of the power factor compare to the parental Bi₂Se₃. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)