Exhaust-gas imaging via planar laser- induced fluorescence of sulfur dioxide

The potential use of planar laser-induced fluorescence (PLIF) of sulfur dioxide (SO₂) for visualization of exhaust-gas distributions is outlined and demonstrated. Strong absorption features in the UV spectral range allow excitation of SO₂ with the fourth harmonic of a Nd:YAG laser at 266 nm. Fluorescence emissions are mostly red-shifted and can be easily detected in single-shot imaging arrangements with a good signal-to-noise ratio. This study uses a premixed methane/air flame that is doped with SO₂ to demonstrate the technique. The signal strength has a pronounced temperature dependence for excitation at 266 nm. Received: 14 January 2002 / Revised version: 30 January 2002 / Published online: 14 March 2002     

WS<Subscript>2</Subscript> layer formation on multi-walled carbon nanotubes

Time-dependent powder X-ray-diffraction analyses reveal that the conversion of WO₃ into WS₂ on carbon nanotube surfaces in the presence of H₂S is a one-step process. The WS₂ layers grow simultaneously along the tube in the radial and axial directions. Received: 17 June 2002 / Accepted: 19 June 2002 / Published online: 15 January 2003 RID="*" ID="*"Corresponding author. Fax: +44-1273/677-196, E-mail: d.walton@sussex.ac.uk     

Continuous-wave tunable Cr2+:ZnS laser

We report the first continuous-wave tunable over ∼280 nm around 2.3 μm room-temperature operation of a chemical vapor transport-grown and diffusion-doped Cr²⁺:ZnS laser, pumped by a Co:MgF₂ laser at 1.67 μm and generating over 100 mW of output power at 16% slope efficiency. The self-consistent results of the laser and spectroscopic analysis demonstrate a large potential of this crystal as an active medium for diode-pumped tunable mid-infrared sources. Received: 7 January 2002 / Revised: 14 March 2002 / Published online: 2 May 2002     

Synthesis, morphologies and Raman-scattering spectra of crystalline stannic oxide nanowires

SnO₂ nanowires were synthesized using a direct gas reaction route and were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), selected-area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and Raman-scattering spectroscopy. XRD, SEM, SAED and HRTEM indicated that the products were tetragonal SnO₂ nanowires with diameters of 10–50 nm. The nanowires were single crystal and solid inside. Dendritic nanowires were observed for the first time. Three vibrational modes were observed in the Raman spectra of the samples. Received: 7 January 2002 / Accepted: 11 April 2002 / Published online: 19 July 2002     

Synthesis of highly ordered LiMnO<Subscript>2</Subscript> nanowire arrays (by AAO template) and their structural properties

LiMnO₂ nanowire arrays were prepared using a porous anodic aluminum oxide (AAO) template from a sol–gel solution containing Li(OAc) and Mn(OAc)₂. Electron-microscope results showed that a uniform length and diameter of LiMnO₂ nanowires were obtained, and the length and diameter of the LiMnO₂ nanowires are dependent on the pore diameter and the thickness of the applied AAO template. X-ray diffraction and electron diffraction pattern investigations demonstrate that LiMnO₂ nanowires are a layered structure of LiMnO₂ crystal. X-ray photoelectron spectroscopy analysis indicates that a material closely resembling stoichiometric layered LiMnO₂ has been obtained. Received: 2 September 2001 / Accepted: 6 January 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-931/891-2582, E-mail: lihl@lzu.edu.cn     

Interface reactions in [Fe/B]<Subscript>n</Subscript> multilayers: a way to tune from crystalline/amorphous layer sequences to homogeneous amorphous Fe<Subscript>x</Subscript>B<Subscript>100-x</Subscript> films

[Fe/B]_{n ≥2} multilayers were prepared by thermal evaporation, ion-beam sputtering and laser ablation. By applying in situ electron spectroscopies (UPS, XPS) and monitoring the electrical resistance during layer growth, evidence could be provided for the occurrence of interface reactions within the range of studied deposition temperatures (77 K ≤T ≤300 K). These reactions result in amorphous Fe_xB_100-x phases, which are spatially restricted to a width of less than 3 nm at the original interface. The amorphicity of the reacted interlayers was unequivocally proven by additional high-resolution electron microscopy (HRTEM) and their characteristically changed magnetic properties. Due to the well-defined width of the interface reaction, homogeneous amorphous Fe_xB_100-x films can be obtained by reducing the individual Fe and B layer thicknesses to below the above reaction depth, while for larger thicknesses layer sequences of the crystalline/amorphous/crystalline type will result. Received: 30 January 2002 / Accepted: 31 January 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +49-731/502-2963, E-mail: hans-gerd.boyen@physik.uni-ulm.de     

Growth and evolution of epitaxial erbium disilicide nanowires on Si (001)

Sub-monolayer amounts of Er deposited onto Si (001)react with the substrate to form epitaxial nanowires of crystalline ErSi₂. The growth of uniaxial structures occurs because the different crystal structures of ErSi₂ and Si have a good lattice match along one Si<110> crystallographic axis but a significant mismatch along the perpendicular Si<110> axis. The nucleation, growth, and subsequent evolution of ErSi₂ nanowires were investigated as functions of erbium coverage on the Si (001) surface, annealing time, and annealing temperature. Low annealing temperatures (620 °C) and times (5 min) produced ErSi₂ nanowires with widths of a few nanometers, heights less than one nanometer, and lengths of several hundred nanometers. For longer annealing times at low temperature, the surface roughened without significant ripening of the wires. Annealing at intermediate temperatures (∼700 °C) caused stacking faults to form along the long axis of the nanowires and their lengths to ripen. At high temperature (800 °C), the wires broke apart into short segments with stacking faults. Received: 30 January 2002 / Accepted: 31 January 2002 / Published online: 3 May 2002     

High-resolution spectroscopy of velocity-selected atoms in a thin cell

We propose a novel technique of sub-Doppler spectroscopy using a thin vapor cell. Optical pumping in a thin cell transfers atoms with small velocity components to a specific quantum state. The resultant velocity distribution appears as a sub-Doppler structure in the absorption spectrum of a probe light. A single laser beam from a laser diode is split into two paths: one beam optically pumps Cs atoms on the D₂ line, and the other probes the absorption on the same line from a perpendicular direction. Observed hyperfine-resolved spectra and their parameter dependence are analyzed on the basis of rate equations. Received: 16 January 2002 / Revised version: 11 February 2002 / Published online: 24 April 2002     

Study of range distribution parameters for bismuth-ion implantation in silver gallium diselenide

Range distributions for bismuth ions implanted in AgGaSe₂ in the energy range 80–300 keV were investigated by using 2.1-MeV He²⁺ Rutherford backscattering spectrometry (RBS). A convolution calculation method was used to extract the true distributions of bismuth from the measured RBS spectra. The range distribution parameters, R_p and ΔR_p, were obtained and compared with those obtained from Monte Carlo simulation. The experimental R_p values agree with the Monte Carlo simulation values very well, but the experimental ΔR_p values are systematically larger than those from the theoretical simulation. Received: 28 January 2002 / Accepted: 11 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-531/856-5167, E-mail: xdliu@sdu.edu.cn     

Abelian decomposition method for G<Subscript>2</Subscript> gauge theory

The method of Abelian decomposition proposed by Faddeev and Niemi is used to derive the low-energy effective lagrangian of G₂ gauge theory. The G₂ algebra is studied. The commutation relations among the generators of the G₂ algebra are established, based on the framework of its regular maximal subalgebra, an SU(3) algebra. Received: 19 December 2002 / Revised version: 10 January 2003 / Published online: 14 March 2003 RID="a" ID="a" e-mail: suw@phy.ccu.edu.tw     

Optimization of the mode matching in pulsed cavity ringdown spectroscopy by monitoring non-degenerate transverse mode beating

A simple and reliable method is presented for optimizing the mode matching of a laser beam to the high-finesse cavity used in pulsed cavity ringdown spectroscopy (CRDS). The method is based on minimizing the excitation of higher-order transverse cavity modes through monitoring the non-degenerate transverse mode beating which becomes visible with induced cavity asymmetry caused by slight misalignment. No additional instrument is required other than a pinhole aperture, thus this method can be applied for CRDS experiments in the whole wavelength range. Measurements of the CRDS absorption spectrum of acetylene (C₂H₂) near 571 nm demonstrate that the mode-matching optimization improves the sensitivity of pulsed CRDS. Received: 22 October 2001 / Revised version: 16 January 2002 / Published online: 14 March 2002     

<Emphasis Type="Italic">EPJdirect</Emphasis>

Quark mass effects are analyzed at high Q² in the current fragmentation region of DIS. It is found that the linear combination F ₂ -2.75F ^c ₂ scales at large Q² and small x. We obtained a lower bound for the ratio F ^c ₂/F ₂ which lies very close to the data from HERA. Received: 14 January 2002 / Revised version: 9 October 2002 Published online: 9 December 2002 RID="a" ID="a" e-mail: ryutin@th1.ihep.su     

Thermodynamic and kinetic stability with respect to hole trapping. of silanic bonds at the Si–SiO<Subscript>2</Subscript> interface

The thermodynamic and kinetic stabilities of the Si–H bonds at the Si–SiO₂ interface are studied on the basis of high-level quantum-mechanical calculations in the framework of density-functional theory. In the absence of an applied electric field, the silanic bond is shown to be stable with respect to both hole capture from the top of the silicon valence band and electron loss to the bottom of the silicon conduction band, but unstable with respect to hole capture from the top of the SiO₂ conduction band. The positively charged hydrogen does not shift spontaneously to protonate a neighbouring siloxanic bridge unless it contains one adsorbed water molecule at least. The protonated siloxanic site thus formed may restore the original silanic site (via simultaneous electron capture from the conduction band and hydron shift to silicon) but also evolve spontaneously to a hydrogen atom via simple electron capture. Received: 2 November 2001 / Accepted: 6 January 2002 / Published online: 20 March 2002 / Published online: 20 March 2002 RID="*" ID="*"Also at: STMicroelectronics, 20041 Agrate MI, Italy (E-mail: gianfranco.cerofolini@st.com)     

Magnetic anisotropy of textured CrO2 thin films investigated by X-ray magnetic circular dichroism

Highly a-axis-textured CrO₂ films have been deposited on Al₂O₃ (0001) substrates by chemical vapor deposition. CrO₂ has been found to have highly a-axis (010)-oriented columnar growth on a Cr₂O₃ (0001) initial layer. The six-fold surface symmetry of the Cr₂O₃ initial layer leads to three equivalent in-plane orientations of the a-axis-oriented CrO₂ unit cell. We report Cr L_2,3 X-ray magnetic circular dichroism data along the surface normal and at 60° off-normal sample orientation. For a 60° sample alignment, a strong increase of the projected orbital moment could be observed for unoccupied majority t_2g states using moment analysis. Therefore, the c axis is identified as the intrinsic magnetic easy axis of CrO₂. In addition, a small spin moment and a very strong magnetic dipole term T_z have been found. Received: 8 January 2002 / Accepted: 8 January 2002     

ZrO2 films deposited by photo-CVD at low temperatures

Zirconium oxide layers have been successfully deposited by photo-CVD at low temperatures. ZrO₂ growth was observed at temperatures as low as 100 °C. When deposited at 250 °C and above, these films exhibited a polycrystalline structure with a mixture of different crystal phases. Deposition at 300 °C was found to form moisture-free ZrO₂ films with a high refractive index of 2.1, a very low effective density of trapped electrons of ∼8.8×10⁸ cm^-2 and an interface trap density of 6.6×10⁹ cm^-2 eV^-1 being readily obtained. Received: 17 December 2001 / Accepted: 6 January 2002 / Published online: 3 June 2002     

Accurate method for the measurement of absorption cross sections of solid-state saturable absorbers

A rigorous approach taking into account both the temporal and spatial distributions of the pulsed probe beam used for transmission measurements of solid-state saturable absorbers is applied to characterise these absorbers accurately. The use of this method can significantly influence the resulting value for the ground-state absorption cross section. It also permits us to avoid the introduction of an artificial excited-state absorption in systems where, according to energy-level diagrams, no such loss should occur. This is illustrated in the case of passive Q-switchers for 1.5-μm lasers such as Co²⁺-doped LaMgAl₁₁O₁₉ and MgAl₂O₄ and Co²⁺- or Cr²⁺-doped ZnSe and ZnS. Received: 21 November 2001 / Revised version: 22 January 2002 / Published online: 14 March 2002     

Comparison between c-cut and a-cut Nd:YVO4 lasers passively Q-switched with a Cr4+:YAG saturable absorber

Comparison between c-cut and a-cut Nd:YVO₄ microchip lasers passively Q-switched with a Cr⁴⁺:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO₄ crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO₄ crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (>10 kW) lasers. Received:10December2001/Revisedversion:22January2002 / Published online: 14 March 2002     

N+BF<Subscript>2</Subscript> and N+C+BF<Subscript>2</Subscript> high-dose co-implantation in silicon

Nitrogen and boron BF₂, and nitrogen, carbon, and boron BF₂ high-dose (6×10¹⁶–3×10¹⁷ cm^-2) co-implantation were performed at energies of about 21–77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three and two surface layers respectively. The outer layer mainly consists of polycrystalline silicon and some amorphous material and Si₃N₄ inclusions. The inner layer is highly defective crystalline silicon, with some inclusions of Si₃N₄ too. In the N+B-implanted sample the intermediate layer is amorphous. Co-implantation of boron with nitrogen and with nitrogen and carbon prevents the excessive diffusivity of B and leads to a lattice-parameter reduction of 0.7–1.0%. Received: 10 January 2002 / Accepted: 30 May 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/3974895; E-mail: Lucia.Barbadillo@uam.es     

Spontaneous growth of arsenic oxide micro-crystals on chemically etched MnAs surfaces

Micrometer-size crystals are observed to grow spontaneously on chemically etched MnAs surfaces. The wet chemical etching leaves a nearly exclusive pile of amorphous arsenic on the surface when the MnAs layer is etched incompletely. Using Raman spectroscopy, we identify that these micro-crystals are the arsenolite crystal of arsenic oxides. The manganese in the MnAs layer is oxidized by the hydrogen peroxide in the etch solution to MnO₂, which then works as the catalyst for the rapid oxidation and crystallization of the amorphous arsenic. Received: 14 November 2002 / Accepted: 18 November 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +49-30/20377-515, E-mail: takagaki@pdi-berlin.de     

Nonlinear electrical characteristics and dielectric properties of Ca,Ta-doped TiO<Subscript>2</Subscript> varistors

Ca,Ta-doped TiO₂ varistors with high nonlinear coefficients are obtained by a ceramic sintering. The nonlinear electrical and dielectric properties of the samples doped with 0.5mol% Ca and various concentrations of Ta (0.05∼2.0mol%) were investigated. The samples sintered at 1350 °C have nonlinear coefficients of α=5.1∼42.1 and high relative dielectric constants approach 10⁵. The effects of Ta-doping on the nonlinear and dielectric properties of the Ca,Ta-doped TiO₂ varistors are studied in greater detail. When the concentration of Ta is 0.5mol%, the sample possesses the highest nonlinear coefficient and a comparatively lower dielectric constant. The effects of Ta and the nonlinear electrical behavior of the TiO₂ system are explained by analogy to a grain-boundary atomic defect model. Received: 24 October 2001 / Accepted: 8 January 2002 / Published online: 3 May 2002 RID="*" ID="*"Corresponding author. Fax: +86-10/826-49531, E-mail: wangwanyan@yahoo.com.cn