A Green＇s function model for ferromagnetism and spin excitations of （Ga,Mn）As diluted magnetic semiconductors

We study (Ga, Mn)As diluted magnetic semiconductors in terms of the Ruderman--Kittel--Kasuya--Yosida quantum spin model in Green's function approach. Random distributions of the magnetic atoms are treated by using an analytical average of magnetic configurations. Average magnetic moments and spin excitation spectra as functions of temperature can be obtained by solving self-consistent equations, and the Curie temperature T_C is given explicitly. T_C is proportional to magnetic atomic concentration, and there exists a maximum for T_C as a function of carrier concentration. Applied to (Ga, Mn)As, the theoretical results are consistent with experiment and the experimental T_C can be obtained with reasonable parameters. This modelling can also be applied to other diluted magnetic semiconductors.     

Carrier-mediated ferromagnetism in N co-doped (Zn, Mn)O-based diluted magnetic semiconductors

Mn-doped ZnO is anti-ferromagnetic spin glass state, however, it becomes half-metallic ferromagnets upon hole doping. In this Letter we report a theoretical study of (Zn, Mn)O system codoped with N, and show that this codoping can change the ground state from anti-ferromagnetic to ferromagnetic. We have carried out the first-principles electronic structure calculations and report total energy to estimate whether the ferromagnetic state was stable or not. Our approach is based on the spin-polarized relativistic Korringa–Kohn–Rostoker (SPR–KKR) density functional theoretical (DFT) method, within the coherent potential approximation (CPA). Self-consistent electronic structure calculations were performed within the local density approximation, using the Vosko–Wilk–Nusair parameterization of the exchange-correlation energy functional. Our results for energy difference between ferromagnetic sate and spin glass state as well as their dependence on concentrations were presented and discussed.     

Domain walls in the (Ga,Mn)as diluted magnetic semiconductor

We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall magnetization profiles. The experiments are interpreted based on microscopic calculations of the micromagnetic parameters and Landau-Lifshitz-Gilbert simulations. We find that the competition of uniaxial and biaxial magnetocrystalline anisotropies in the film is directly reflected in orientation dependent wall widths, ranging from approximately 40 to 120 nm. The domain walls are of the Néel type and evolve from near-90 degrees walls at low temperatures to large angle [11[over ]0]-oriented walls and small angle [110]-oriented walls at higher temperatures.     

Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation

We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained.     

Chemical manipulation of high-T(C) ferromagnetism in ZnO diluted magnetic semiconductors

We report the use of targeted p- and n-type chemical perturbations to manipulate high-T(C) ferromagnetism in Mn(2+):ZnO and Co(2+):ZnO in predictable and reproducible ways. We demonstrate a clear correlation between nitrogen and high-T(C) ferromagnetism for Mn(2+):ZnO and an inverse correlation for Co(2+):ZnO, both as predicted by recent theoretical models. These chemical perturbations reveal rich possibilities for exerting external control over high-T(C) spin ordering in diluted magnetic semiconductors.     

Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors

The influences of Mn doping on the structural quality of the Zn_xMn_1−xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for Zn_xMn_1−xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different T_C should explain that the magnetic transition in field-cooled magnetization of Zn_1−xMn_xO:N films at low temperature is caused by the strong p-d exchange interactions besides magnetic transition at 46 K resulting from Mn oxide, and that the room temperature ferromagnetic signatures are attributed to the uncompensated spins at the surface of anti-ferromagnetic nano-crystal of Mn-related Zn(Mn)O.     

Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.     

Polarization of valence band holes in the (Ga,Mn)as diluted magnetic semiconductor

We report on direct measurements of the impurity band hole polarization in the diluted magnetic semiconductor (Ga,Mn)As. The polarization of impurity band holes in a magnetic field is strongly enhanced by antiferromagnetic exchange interaction with Mn ions. The temperature dependence of the hole polarization shows a strong increase of this polarization below the Curie temperature. We show that the ground state of the impurity band is formed by uniaxial stress split F=+/-1 states of antiferromagnetically coupled Mn ions (S=5/2) and valence band holes (J=3/2). The gap between the Mn acceptor related impurity band and the valence band is directly measured in a wide range of Mn content.     

室温下(Ga,Mn)As中载流子的自旋弛豫特性

运用飞秒时间分辨抽运-探测克尔光谱技术,研究了室温下退火及未退火(Ga,Mn)As的载流子自旋弛豫的激发能量密度依赖性,发现电子自旋弛豫时间随激发能量密度增加而增大,而在同一激发能量密度下,退火样品比未退火样品具有更短的载流子复合时间、电子自旋弛豫时间和更大的克尔转角,显示DP机理是室温下(Ga,Mn)As的电子自旋弛豫的主导机理.退火(Ga,Mn)As的超快克尔增强效应显示其在超高速全光自旋开关方面的潜在应用价值,也为(Ga,Mn)As铁磁性起源的p-d交换机理提供了证据. 关键词： (Ga Mn)As稀磁半导体 时间分辨克尔光谱 电子自旋弛豫 DP机理     

Electronic structure of C co-doped (Ga,Fe)N-based diluted magnetic semiconductors

We report results of the study on GaN doped with Fe and co-doped with Carbon (C), for acceptors defect, making use of the spin-polarized relativistic Korringa-Kohn-Rostoker coherent-potential approximation method. In order to understand and to explain the half-metallicity and ferromagnetism stability, observed in Ga_0.95Fe_0.05N with acceptor defects, we calculated the electronic structure and magnetic properties of p-type Ga_0.95Fe_0.05N. Furthermore, comparison between the electronic structure of the substitutional and interstitial carbon in (Ga, Fe)N is also given. Mechanism of exchange interaction between magnetic ions in Ga_0.95Fe_0.05N with acceptor defect is investigated. The hyperfine interaction has been calculated for the disordered alloy systems Ga_0.95Fe_0.05N_1-xC_x (0.01 ≤ x ≤ 0.08).     

Noncollinear ferromagnetism in (III,Mn)V semiconductors

We investigate the stability of the collinear ferromagnetic state in kinetic exchange models for (III,Mn)V semiconductors with randomly distributed Mn ions. Our results suggest that noncollinear ferromagnetism is common to these semiconductor systems. The instability of the collinear state is due to long-range fluctuations involving a large fraction of the localized magnetic moments. We address conditions that favor the occurrence of noncollinear ground states and discuss unusual behavior that we predict for the temperature and field dependence of its saturation magnetization.     

Spin dynamics in magnetic materials investigated by muon spin relaxation

We present a quantitative analysis of the temperature dependence of the muon spin relaxation rate measured in simple magnets. We consider the low temperature, critical and high temperature regimes. This revised version was published online in August 2006 with corrections to the Cover Date.     

Spin-fluctuation mediated high-temperature ferromagnetism in Si:Mn dilute magnetic semiconductors

We discuss a possible route to explain high-temperature ferromagnetism in Si:Mn dilute magnetic semiconductors. We argue that most Mn atoms are segregated within nanometer-sized regions of magnetic precipitate and form the alloy, or compound, MnSi_{2 -z} with z ≈ (0.25?\div0.30), whereas a small minority of Mn atoms forms ?ngstr?m-sized magnetic defects embedded in the host. Assuming that MnSi_{2 -z} is a weak itinerant ferromagnet which supports sizable spin fluctuations (paramagnons) far above the intrinsic Curie temperature, we show that the Stoner enhancement of the exchange interaction between the local magnetic moments of the defects occurs. As a result, a significant increase of the temperature of global ferromagnetic order in the system is achieved. We develop a phenomenological approach, to qualitatively describe this effect.     

高质量稀磁半导体(Ga,Mn)Sb单晶薄膜分子束外延生长

理论预言窄禁带稀磁半导体(Ga,Mn)Sb及其异质结构可能存在量子反常霍尔效应等新奇特性, 近年来受到了特别关注. 但是, 由于(Ga,Mn)Sb薄膜生长窗口窄, 纯相(Ga,Mn)Sb薄膜制备比较困难, 迄今关于这类材料的研究报道为数不多. 本文采用低温分子束外延的方法, 通过优化生长条件, 成功制备出厚度为10 nm, Mn含量在0.016至0.039之间的多组(Ga,Mn)Sb薄膜样品. 生长过程中反射式高能电子衍射原位监测和磁性测量都表明没有MnSb等杂相的偏析, 同时原子力显微镜图像表明其表面形貌平滑, 粗糙度小. 通过生长后退火处理, (Ga,Mn)Sb薄膜的最高居里温度达到30 K. 此外, 本文研究了霍尔电阻和薄膜电阻随磁场的变化关系, 在低温下观测到明显的反常霍尔效应.     

Curie温度附近稀磁半导体(Ga,Mn)As的电学噪声谱性质

建立了自发噪声谱测量系统来研究稀磁半导体（Ga,Mn）As的电学噪声性质.通过测量（Ga,Mn）As材料的自发噪声谱,发现（Ga,Mn）As的自发涨落会随温度升高而逐渐增大,同时,外加磁场会降低（Ga,Mn）As的自发涨落,这来源于外加磁场导致的（Ga,Mn）As磁畴部分有序化.此外,不同频率的噪声随温度的变化规律有很大差异：当频率低于30 kHz的时候,噪声谱和温度的变化关系和热噪声很相似,但数值上明显大于热噪声的值;当频率在30 kHz左右的时候,噪声大小和温度成线性关系;当频率大于30 kHz以后,在相变点附近噪声大小和温度的关系出现了明显的转折,高频高温噪声的大小和热噪声的理论值非常接近.这些结果有助于深入理解（Ga,Mn）As磁性起源的物理机制. 关键词： 自旋电子学 稀磁半导体 自发涨落谱     

Carrier-induced magnetic ordering control in a digital (Ga,Mn)as structure

With the full potential linearized augmented plane method, we theoretically investigated the carrier-induced magnetization reversal in digital (Ga,Mn)As heterostructures with varying distance between the two Mn layers along with the distribution and concentration of external carriers. The presence of external holes induces switching from the antiferromagnetic to ferromagnetic state when d(Mn-Mn)=16.96 A, whereas the addition of electrons produces no significant effect. We demonstrate a possibility to separately control T(c) and magnetic reversal in digital (Ga,MN)As alloys.     

Prediction of enhanced ferromagnetism in (Ga,Mn)As by intrinsic defect manipulation

In the diluted magnetic semiconductor (Ga,Mn)As the excess of As incorporated as As antisites (As_Ga) is responsible for the hole compensation. The As_Ga defect can be transformed into a As interstitial–Ga vacancy pair (As_i–V_Ga) upon illumination. In this paper we study the effects of such a transition on the ferromagnetism of (Ga,Mn)As using density functional theory within the local spin density approximation. We find that the ferromagnetic order in (Ga,Mn)As is strongly enhanced if As_Ga are transformed into As_i–V_Ga pairs, since the hole compensation is reduced. This suggests a valuable way to tune the carrier concentration and hence the T_c in (Ga,Mn)As, without changing the Mn concentration nor the microscopic configuration of the Mn ions.     

Pressure induced resistivity changes in diluted magnetic semiconductors of (Hg,Fe)Se and (Hg,Mn)Te

Abstract

Electrical resistance measurements have been performed on samples of Hg_1-xFe_xSe and Hg_1-xMn_xTe for × ≤ 0.30 as a function of pressure to 7.0 GPa. Both materials crystallize in the B3 structure at atmospheric pressure and room temperature and belong to the class of materials known as diluted magnetic semiconductors. At elevated pressures, HgTe undergoes a phase change from the B3 to B9 phase which is accompanied by an increase in the electrical resistivity of several orders of magnitude. The results reported here are that increasing × in both materials serves to increase the B3-B9 transition pressure. The implication being that partial replacement of the Hg-bonds by Fe-Se and Mn-Te, respectively, increases the stability range of the B3 phase