Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a singlemolecule magnet sandwiched between the nonmagnetic and ferromagnetic(FM) leads. By applying different voltage pulses Vwriteacross the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses V_(probe). It is shown that the polarization of the spin current is extremely high(up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.     

Controllable Spin Polarization of Charge Current by Rashba Spin Orbital Coupling

We report a theoretic study on modulating the spin polarization of charge current in a mesoscopic four-terminal device of cross structure by using the inverse spin hall effect. The scattering region of device is a two-dimensional electron gas (2DEG) with Rashba spin orbital interaction (RSOI), one of lead is ferromagnetic metal and other three leads are spin-degenerate normal metals. By using Landauer-Büttiker formalism, we found that when alongitudinal charge current flows through 2DEG scattering region from FM lead by external bias, the transverse current can be either a pure spin current or full-polarized charge current due to the combined effect of spin hall effect and its inverse process, and the polarization of this transverse current can be easily controlled by several device parameters such as the Fermi energy, ferromagnetic magnetization, and the RSOI constant. Our method may pave a new way to control the spin polarization of a charge current.     

Generation and manipulation of spin current via a hybrid four-terminal single-molecule junction

We present a new device which consists of a molecular quantum dot (MQD) attached to a normal-metal, two ferromagnetic (FM), and a superconducting leads. The spin-related Andreev reflection (AR) current and the spin-dependent single-particle tunneling current through the normal-metal terminal are obtained, and it is found that the spin current exhibits the transistor-like behavior. The joint effects of the coherent spin flip and the angle between magnetic moments of the two FM leads on the spin current are also studied, these results provide the possibility to manipulate the spin current with the system parameters.     

Spin polarization of two-dimensional electron gas in hybrid ferromagnetic/semiconductor nanostructures

We present a theoretical study on the spin-dependent transport of electrons in hybrid ferromagnetic/semiconductor nanosystem under an applied bias voltage. Experimentally, this kind of nanosystem can be realized by depositing a magnetized ferromagnetic stripe with arbitrary magnetization direction on the surface of a semiconductor heterostructure. It is shown that large spin-polarized current can be achieved in such a nanosystem. It is also shown that the spin polarity of the electron transport can be switched by adjusting the applied bias voltage. These interesting properties may provide an alternative scheme to realize spin injection into semiconductors, and such a nanosystem may be used as a tunable spin-filter by bias voltage.     

Magnetization reversal and spin accumulation in nonmagnetic metals by spin injection from lateral Co/Cu,Co/Al heterojunctions

We have fabricated ferromagnetic/nonmagnetic (FM/NM) metal heterojunctions for the detection of the spin accumulation effect in different nonmagnetic metals. To understand the effect of spin accumulation in more detail, the switching behavior of the ferromagnetic wires was studied by means of magnetoresistance (MR) measurements and Monte Carlo simulations (MC). The polycrystalline heterojunctions were prepared by high-resolution electron beam lithography (HR-EBL) and a special oblique evaporation technique. The ferromagnetic (FM) and the nonmagnetic (NM) metal were evaporated on top of each other in a single-evaporation step to achieve an interface between the two metals of high quality. To verify the quality of the interface, we measured the spin accumulation effect in nonmagnetic copper (Cu) and aluminum (Al) and determined the spin polarization of the current at the interface between the ferromagnetic and nonmagnetic metals.     

外应力场下铁磁/反铁磁双层膜系统中的自旋波

采用自由能极小的方法研究了铁磁/反铁磁双层膜系统在外应力场下的一致进动自旋波性质，即铁磁共振现象. 本模型中铁磁层很薄可看成单畴结构，但具有单轴磁晶各向异性和立方磁晶各向异性；而反铁磁层仅具有单轴磁晶各向异性，但其厚度趋于半无穷. 推导出了该系统的铁磁共振频率和频谱宽度的解析式. 结果表明，外应力场和界面交换耦合或反铁磁磁强度仅在弱磁场下对系统的铁磁共振有影响，且系统的铁磁共振行为按磁场强度可分为两支，其区分弱磁场和强磁场的临界场依赖于外应力场的方向. 另一方面，应力场方向的改变可借助于反铁磁层磁畴变化对铁磁层磁晶各向异性轴有影响. 关键词： 铁磁/反铁磁双层膜 界面耦合强度 铁磁共振 应力场     

旁耦合于介观环与铁磁电极量子点系统中的自旋极化输运

借助单杂质Anderson模型哈密顿量,及利用格林函数和运动方程等理论,研究旁耦合于介观环和铁磁电极的量子点系统中的极化输运特性.结果表明,通过调节点-环耦合强度、铁磁电极中的极化强度、磁矩相对取向及温度等,均能实现控制体系中自旋极化电流的目的,达到自旋阀效应.为此系统作为一种新的自旋电子材料提供理论依据.     

Thermospin phenomena in a quantum dot attached to ferromagnetic leads: Role of asymmetry and alignment

We study the thermospin effects in a system consisting of a quantum dot coupled to ferromagnetic leads. It is shown that sign reversal and oscillation of spin Seebeck coefficient are indicated as a function of device parameters. When the magnetizations of the leads are formed in parallel alignment, the spin Seebeck coefficient and the spin-FOM have their maximum values for the symmetric dot-lead coupling case. However, in the antiparallel case, the optimal device parameters depend mainly on the strength of the magnetic field.     

Field-induced ferromagnetic metallic state in the bilayer manganite (La0.4Pr0.6)1.2Sr1.8Mn2O7, probed by neutron scattering

The bilayer manganite La1.2Sr1.8Mn2O7 exhibits a phase transition from a paramagnetic insulating (PI) to a ferromagnetic metallic (FM) state with a colossal magnetoresistance (CMR) effect. Upon 60% Pr substitution, magnetic order and PI to FM transition are suppressed. Application of a moderate magnetic field restores an FM state with a CMR effect. Neutron scattering by a single crystal of (La0.4Pr0.6)1.2Sr1.8Mn2O7, under a magnetic field of 5 T, has revealed a long-range and homogeneous ferromagnetic order. In the PI phase, under zero field, correlated lattice polarons have been detected. At 28 K, under 5 T, the spin wave dispersion curve determines an in-plane isotropic spin wave stiffness constant of 146 meV A(2). So the magnetic field not only generates a homogeneous ferromagnetic ground state, but also restores a magnetic coupling characteristic of FM CMR manganites.     

Tailor-made nano-structured materials for perpendicular recording media and head—precise control of direct/indirect exchange coupling

Tailor-made nano-structured spin materials obtained by precisely controlled nano-scale fabrication technologies for use in ultra-high density hard disk drives (HDDs), as well as an understanding of their nanomagnetics, are essential from the view point of materials, processes, and physics. Artificial control of the exchange coupling among ferromagnetic layers through the RKKY interaction (indirect) and direct exchange coupling represented as the exchange bias at the ferromagnetic (FM)/antiferromagnetic (AFM) interface are of great interest and have received significant attention to induce new modulated spin structures in conventional simple FM materials. In particular, soft magnetic under layer (SUL) with strong synthetic antiferromagnetic (SAF) coupling between two adjacent soft magnetic layers, exchange coupled stacked media introducing exchange coupling between FM layers and giant exchange anisotropy at the FM/AFM interface have attracted significant attention from the view point of applications. Within the framework of the present paper, we discuss future technical trends for SUL, granular media and the spin-valve head from the viewpoint of direct and/or indirect exchange coupling based on our recent results.     

Kondo effect in quantum dots coupled to ferromagnetic leads

We study the Kondo effect in a quantum dot coupled to ferromagnetic leads and analyze its properties as a function of the spin polarization of the leads. Based on a scaling approach, we predict that for parallel alignment of the magnetizations in the leads the strong-coupling limit of the Kondo effect is reached at a finite value of the magnetic field. Using an equation of motion technique, we study nonlinear transport through the dot. For parallel alignment, the zero-bias anomaly may be split even in the absence of an external magnetic field. For antiparallel spin alignment and symmetric coupling, the peak is split only in the presence of a magnetic field, but shows a characteristic asymmetry in amplitude and position.     

Fano--Kondo effect in the T-shaped double quantum dots coupled to ferromagnetic leads

Using an equation-of-motion technique, we theoretically study the Fano--Kondo effect in the T-shaped double quantum dots coupled to two ferromagnetic leads by the Anderson Hamiltonian. We calculate the density of states in this system with both parallel and antiparallel lead-polarization alignments, and our results reveal that the interdot coupling, the spin-polarized strength and the energy level of the side coupled quantum dot greatly influence the density of states of the central quantum dot. This system is a possible candidate for spin valve transistors and may have potential applications in the spintronics.     

Interaction-driven spin precession in quantum-dot spin valves

We analyze spin-dependent transport through spin valves composed of an interacting quantum dot coupled to two ferromagnetic leads. The spin on the quantum dot and the linear conductance as a function of the relative angle theta of the leads' magnetization directions is derived to lowest order in the dot-lead coupling strength. Because of the applied bias voltage spin accumulates on the quantum dot, which for finite charging energy experiences a torque, resulting in spin precession. The latter leads to a nontrivial, interaction-dependent, theta dependence of the conductance. In particular, we find that the spin-valve effect is reduced for all theta not equal pi.     

界面铁掺杂锯齿形石墨烯纳米带的自旋输运性能

基于密度泛函理论第一原理系统研究了界面铁掺杂锯齿(zigzag)形石墨烯纳米带的自旋输运性能, 首先考虑了宽度为4的锯齿(zigzag)形石墨烯纳米带, 构件了4个纳米器件模型, 对应于中心散射区的长度分别为N=4, 6, 8和10个石墨烯单胞的长度, 铁掺杂在中心区和电极的界面. 发现在铁磁(FM)态, 四个器件的β自旋的电流远大于α自旋的电流, 产生了自旋过滤现象; 而界面铁掺杂的反铁磁态模型, 两种电流自旋都很小, 无法产生自旋过滤现象; 进一步考虑电极的反自旋构型, 器件电流显示出明显的自旋过滤效应. 探讨了带宽分别为5和6的纳米器件的自旋输运性能, 中心散射区的长度为N=6个石墨烯单胞的长度, FM 态下器件两种自旋方向的电流值也存在较大的差异, β自旋的电流远大于α自旋电流. 这些结果表明: 界面铁掺杂能有效调控锯齿形石墨烯纳米带的自旋电子, 对于设计和发展高极化自旋过滤器件有重要意义.     

DC current effect on the magnetic phase and transport properties of polycrystalline La0.7Ca0.3MnO3

The influence of DC current on the resistivity and phase transition of polycrystalline La_0.7Ca_0.3MnO₃ has been investigated. The specific heat measurement found that charge carriers and ferromagnetic spin-wave contributions were changed after applied DC current. Applying high electric fields leads to the formation of ferromagnetic regions. The resistivity drops abruptly once the percolating current path is established. As current through the sample disappears, the larger ferromagnetic (FM) clusters, however, remain and are frozen in giving a measurable contribution to the specific heat of the system. The larger clusters should give rise to the value of spin-wave stiffness constant (D), as it is expected to increase the strength of the ferromagnetic coupling. The metallic ferromagnetic regions would make the charge carrier delocalization and attribute to specific heat linear term γ.     

Spin filter,spin amplifier and spin diode in graphene nanodisk

Graphene nanodisk is a graphene derivative with a closed edge. The trigonal zigzag nanodisk with size N has N-fold degenerated zero-energy states. It can be interpreted as a quantum dot with an internal degree of freedom. The ground state of nanodisk is a quasi-ferromagnet, which is a ferromagnetic-like state with a finite but very long life time. We investigate spin-filter effects in the system made of nanodisks and leads. A novel feature of the nanodisk spin filter is that its spin can be controlled by the spin current. We propose some applications for spintronics, such as spin memory, spin amplifier and spin diode. It is argued that a spin current is reinforced (rectified) by feeding it into a nanodisk spin amplifier (diode). Graphene nanodisk would be a promising candidate of future electronic and spintronic nanodevices.     

The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic（FM/OSC/FM） system

From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm’s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.     

多层结构双自旋过滤隧道结中的电子输运特性

在转移矩阵方法及Mireles和Kirczenow的量子相干输运理论的基础上,研究了正常金属层/磁性半导体层/非磁绝缘层/磁性半导体层/正常金属层型双自旋过滤隧道结中Rashba自旋轨道耦合效应和自旋过滤效应对自旋相关输运的影响.讨论了隧穿磁电阻（TMR）、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系.研究表明：含磁性半导体层的双自旋过滤隧道结由于磁性半导体层的自旋过滤效应和Rashba自旋轨道耦合作用可获得极大的TMR值.另外TMR和隧穿电导随着Rashba自旋轨道耦合强度的变化而振荡,振荡周期随Rashba自旋轨道耦合强度的增大逐渐减小. 关键词： 双自旋过滤隧道结 Rashba自旋轨道耦合 隧穿磁电阻 隧穿电导     

Phase diagram of the frustrated asymmetric ferromagnetic spin ladder

We present a systematic investigation on the ground state of an asymmetric two-leg spin ladder (where exchange couplings of the legs are unequal) with ferromagnetic (FM) nearest-neighbor interaction and diagonal anti-ferromagnetic frustration using the density matrix renormalization group method. When the ladder is strongly asymmetric with moderate frustration, a magnetic canted state is observed between an FM state and a singlet dimerized state. The phase boundaries are dependent on the asymmetric strength. On the other hand, when the asymmetric strength is intermediate, a so-called spin-stripe state (spins align parallel on the same legs, but antiparallel on rungs) is discovered, and the system experiences a first-order phase transition from the FM state to the spin-stripe state upon increasing frustration. Numerical evidence is presented for interpretation of the phase diagram in terms of frustration and the asymmetric strength.     

Electron doping induced stable ferromagnetism in two-dimensional GdI3 monolayer

As a two-dimensional material with a hollow hexatomic ring structure, Néel-type anti-ferromagnetic (AFM) GdI₃ can be used as a theoretical model to study the effect of electron doping. Based on first-principles calculations, we find that the Fermi surface nesting occurs when more than 1/3 electron per Gd is doped, resulting in the failure to obtain a stable ferromagnetic (FM) state. More interestingly, GdI₃ with appropriate Mg/Ca doping (1/6 Mg/Ca per Gd) turns to be half-metallic FM state. This AFM−FM transition results from the transfer of doped electrons to the spatially expanded Gd-5d orbital, which leads to the FM coupling of local half-full Gd-4f electrons through 5d−4f hybridization. Moreover, the shortened Gd−Gd length is the key to the formation of the stable ferromagnetic coupling. Our method provides new insights into obtaining stable FM materials from AFM materials.