晶体LiCl∶Ni2+局域结构、吸收光谱和电子顺磁共振谱的研究

采用半自洽场自由Ni2+的3d轨道模型以及点电荷-偶极子模型,利用完全对角化方法,建立了LiCl∶Ni2+晶体的D2h对称局域结构与吸收光谱、电子顺磁共振谱之间的定量关系,统一解释了LiCl∶Ni2+晶体的局域结构与吸收光谱、电子顺磁共振谱,确定了实验中测得的零场分裂D、E的符号,预测了实验中未测得的LiCl∶Ni2+晶体的精细吸收光谱.理论计算结果与实验观测值符合得很好.     

Ni(IO3)2·2H2O晶体的局部结构、吸收谱和漫反射光谱的研究

采用半自洽场(semi-SCF)d轨道模型和点电荷模型,利用完全对角化方法,建立了D4h对称晶体场中晶体的局部结构与光谱之间的定量关系,统一解释了Ni(IO3)2·2H2O晶体的局部结构、吸收光谱和漫反射光谱的实验值,预测了Ni(IO3)2·2H2O晶体的光谱精细结构和电子顺磁共振(EPR)谱(零场分裂D和顺磁g因子).所得理论结果与实验值符合得很好.     

Ni(IO_3)_2·2H_2O晶体的局部结构、吸收光谱和漫反射光谱的研究

采用半自洽场(semi-SCF)d轨道模型和点电荷模型,利用完全对角化方法,建立了D4h对称晶体场中晶体的局部结构与光谱之间的定量关系,统一解释了Ni(IO3)2.2H2O晶体的局部结构、吸收光谱和漫反射光谱的实验值,预测了Ni(IO3)2.2H2O晶体的光谱精细结构和电子顺磁共振(EPR)谱(零场分裂D和顺磁g因子)。所得理论结果与实验值符合得很好。     

CdX2(X=Cl、Br):Ni2+晶体的吸收光谱和EPR谱的统一解释

本文考虑3d电子和轨道局域性差异和配体旋-轨耦合作用的影响,在晶体场理论和电子顺磁共振理论基础上,采用d轨道模型,推导出了3d2/d8电子组态在D3d对称下的广义能量矩阵,利用双共价因子双旋-轨耦合EPR谱高阶微扰公式,统一解释了CdX2(X=Cl、Br):Ni2+晶体的吸收光谱和EPR谱.     

Ni(en)3[Ni(en)2Ag2(NCS)6]·H2O晶体的吸收光谱和EPR谱的研究

采用半自洽场(semi-SCF) d轨道模型和点电荷模型,建立起了过渡金属离子晶体局域结构、吸收光谱与EPR谱之间的定量关系,应用高阶微扰的方法,引入平均共价因子N,统一的解释了ENST晶体中过渡金属Ni2+在D4h对称的伸长和压缩八面体时的吸收光谱、顺磁g因子和零场分裂D的值,其计算结果与实验发现较好的符合,同时本文还确定了实验中测得的零场分裂D的符号以及在实验中未测得的部分吸收光谱的值.     

CsCdCl3:Ni2+晶体的光谱和EPR谱的理论研究

基于强场图像,采用点电荷-偶极子模型和双自旋-轨道耦合理论,建立了CsCdCl3:Ni2+晶体的局域结构与光吸收谱和电子顺磁共振(EPR)谱的关联公式.与以前的研究不同,我们在光吸收谱的计算中考虑了配体离子的自旋-轨道耦合作用的贡献,统一地解释了强场下CsCdCl3:Ni2+晶体的光学吸收谱、EPR谱及局域结构,所得理论结果与实验发现很好吻合.并讨论了所得结果的合理性.     

RbCdF3:Ni2+晶体结构相变、光谱精细结构和EPR谱的研究

本文采用半自洽场(semi-SCF)3d轨道模型和μ-κ-α模型,利用完全对角化方法,建立了Oh、D4h对称晶体场局部结构参数与光谱精细结构、EPR谱之间的定量关系,统一解释了RbCdF3∶Ni2+晶体的光谱精细结构和EPR谱。所得理论结果与实验值符合很好。     

YAG:V2+激光材料晶格畸变及其EPR参量研究

利用Newman的晶场叠加模型,建立了晶体微观结构与电子顺磁共振(EPR)参量之间的定量关系.采用全组态完全对角化方法,对YAG:V2+晶体的局域晶格畸变及其EPR参量进行了系统的研究,结果表明:V2+离子掺入YAG晶体后,V2+离子的局域结构产生压缩三角晶格畸变,沿[111]晶轴方向V2+离子上方的三个O2-配体与下方的三个O2-配体均偏离[111]轴1.96°,从而成功地解释了YAG:V2+晶体的EPR参量.同时研究也表明,SS与SOO磁相互作用对EPR参量的贡献不可忽略.     

KMgF3∶Sm2+∶Li+晶体的色心分析

利用提拉法多次生长了KMgF3∶Sm2+和KMgF3∶Sm2∶Li+晶体;在KMgF3∶Sm2晶体结构分析的基础上,通过测试和分析KMgF3∶Sm2+和KMgF3∶Sm2+∶Li+晶体的激发光谱、发射光谱以及衰减曲线,揭示了晶体的7 F0→5D0激发光谱中,680 ～ 682 nm范围内未被揭示的一个激发峰的产生机理.最后得出结论该激发峰是由Li+引起的HA色心,此结论通过355 nm紫外光照射对光谱的影响进一步得到了确认.     

掺杂晶体SrLaAlO4:Cr3+局域结构的研究

采用半自洽场 (semi-SCF) d轨道波函数模型和点电荷模型,利用高阶微扰公式,在晶体掺杂过渡金属离子后其结构对称性不会被破坏的条件下,由d-d跃迁光谱和EPR谱,确定SrLaAlO4: Cr3+晶体的局域结构.计算发现,掺入Cr3+后,晶体的键长为:R′⊥=0.1922nm, R′∥=0.2197nm.所得计算结果与实验值吻合得很好.     

Synthesis and Structure Determination of 1, 4, 7, 11, 14, 17, 21, 24, 27-Nonaoxatriacontan-8, 10, 18, 20, 28, 30-Esaone

The title compound crystallizes in the trigonal space group R-3, with unit-cell parameters: a = 23.261(4), c = 9.537(2) Å; λ(MoKα) = 0.71073 Å, V = 4469(2) Å³, and Z = 6. The structure has been solved by direct methods using X-ray diffraction techniques. The final reliability index for the computed structure is 0.0826 for 929 observed reflections and 121 refined parameters. Crown ether adopts an almost circular shape and macrocycles are piled up in a columnar arrangement forming tubular nanochannels. The channels are filled with guest CDCl₃ molecules, characterised by rotational disorder.     

Effect of ammonium malate on growth rate,crystalline perfection,structural, optical,thermal, mechanical,dielectric and NLO behaviour of ammonium dihydrogen phosphate crystals

The effect of ammonium malate on the growth rate, structural, optical, thermal, mechanical, dielectric properties, crystalline perfection and second harmonic generation (SHG) efficiency of ammonium dihydrogen phosphate single crystals grown by the slow cooling method has been investigated. The lattice parameters of the grown crystals were obtained by the single-crystal X-ray diffraction analysis. Fourier transform infrared studies confirm the functional groups of the crystals. UV–vis study shows that the transparency is increased much by the dopant. Thermal analysis was performed to study the thermal stability of the grown crystals. Vickers hardness measurements reveal the higher hardness of the doped crystals. Low dielectric losses were observed from the dielectric measurements for the doped ADP crystals. The high-resolution X-ray diffraction studies show that the crystalline perfection of the crystals is good. The relative SHG efficiency measurements revealed that the dopant has enhanced the efficiency.     

Intermetallic Compounds CsnMk (М = Na,K, Rb,Pt, Au,Hg, Te): Geometrical and Topological Analysis,Cluster Precursors,and Self-Assembly of Crystal Structures

Crystallography Reports - A geometrical and topological analysis has been performed, and self-assembly of the crystal structures of intermetallic compounds CsnMk (М = Na, K, Rb, Pt, Au, Hg,...     

Peculiarities of the Structure,Moduli of Elasticity,and Knoop Indentation Patterns of Deformation and Fracture of Single Crystals of Potassium,Rubidium, Cesium,and Ammonium Hydrophthalates

Crystallography Reports - The crystal structure of potassium, rubidium, cesium, and ammonium hydrophthalates is analyzed based on the data in the literature. A relationship between their structure...     

Specific Features of the Formation of Gallium,Indium, Bismuth,and Antimony Nanoparticles

Crystallography Reports - Gallium, indium, bismuth, and antimony nanoparticles were obtained by vacuum evaporation technique onto glass carbon substrates at an argon gas pressure of 6 × 103 Pa...     

Structure, absolute configuration, and conformation of the antimalarial compound, Artemisinin

The crystal and molecular structure of the antimalarial compound Artemisinin (formerly known as Qinghaosu), C₁₅H₂₂O₅ has been determined by direct methods. Crystals are orthorhombic colorless needles, space group P2₁2₁2₁, Z = 4. D _c = 1.299 g cm ^–3, with unit cell parameters a = 6.3543(9), b = 9.439(3), c= 24.066(4) Å. The molecule incorporates a fused ring system containing a six-membered ring C which includes an oxygen bridge and a peroxy-bridge. The ring C has a distorted boat conformation and the C - O - O - C torsion angle is 47.8(2)°. Rings A and D have symmetrical chair and distorted chair conformations, repectively. Ring junctions A/B, A/D, and C/D are cis, junction B/D is trans. All inter-molecular contacts are van der Waals. The absolute configuration of Artemisinin was determined from the refined value of the Flack x parameter. [The atomic coordinates given in a previous structure analysis, Crystal Structure and Absolute Configuration of Qinghaosu, Qinghaosu Research Group, Institute of Biophysics, Academica Sinica, Scientia Sinica, Vol. XXIII No. 3, 380 (1980), do not display the molecule in its absolute configuration.]     

Influence of oxygen, hydrogen, helium, argon and vacuum on the surface behavior of molten InSb, other semiconductors, and metals on silica

Sessile drop experiments were performed on molten indium antimonide on clean quartz (fused silica) surfaces. A cell was constructed through which argon, helium, oxygen, hydrogen or a mixture of these was flowed at 600 °C. Some of the InSb was doped with 0.1% Ga. The surface tension σ of oxide-free molten InSb was smaller in Ar than in He, may have increased with increasing O₂ in the gas, and was not influenced by Ga or H₂. The contact angle θ on silica was higher in the presence of Ar, was lowered by O₂, and was not influenced by H₂ or Ga. The work of adhesion W and the surface energy σ_sv of the silica were higher in He than in Ar. The surface remained free of solid oxide only in flowing gas containing 0.8 ppm O₂. This behavior is attributed to reaction of O₂ at the surface of the melt to form In₂O gas. When solid oxide formed on Ga-doped material, it was strongly enriched in Ga, with the Ga/In ratio increasing with the concentration of O₂ in the gas.

Examination of published sessile-drop results for liquid metals and semiconductors on silica revealed that W and σ_sv were highest for reactive melts, in which SiO₂ dissolves. For non-reactive melts, W and σ_sv were lower and θ higher in a gas than in a vacuum, regardless of whether the experiments had been carried out in sealed ampoules, a flowing gas, or dynamic vacuum. The implication is that the surface of silica was different in a vacuum than in a gas at 1 bar.