The origin of blue photoluminescence from nc-Si/SiO2 multilayers

Intensive blue photoluminescence （PL） was observed at room temperature from the nanocrystalline-Si/SiO2 （nc-Si/SiO2） multilayers （MLs） obtained by thermal annealing of SiO/SiO2 MLs for the first time. By controlling the size of nc-Si formed in SiO sublayer from 3.5 to 1.5 nm, the PL peak blueshifts from 457 to 411 nm. Combining the analysis of TEM, Raman and absorption measurement, this paper attributes the blue PL to multiple luminescent centres at the interface of nc-Si and SiO2.     

Room temperature Ge and ZnO embedded inside porous silicon using conventional methods for photonic application

In this paper we reported room temperature synthesis of embedded porous Si (PS) based structures using simple and low cost techniques of electrochemical etching and thermal evaporation. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF). The Ge and ZnO layers were deposited onto the PS by conventional thermal evaporation. Three samples prepared namely PS, Ge/PS and ZnO/Ge/PS. Structural analyses, SEM revealed that the structures contained 500–700 nm circular-pores and EDX suggested the presence of Ge and ZnO inside the pores. Photoluminescence (PL) spectra of the three samples revealed emissions peak at 380, 520 and 639 nm, respectively, with ZnO/Ge/PS displaying a high UV emission peak accompanied by low and broad green to red emission peaks. The Ge/PS sample shows emission peaks from green to red and the PS sample reveals a broad peak in the red region. These characteristics demonstrate the potential of the PS-based structures to emit light at a broader spectrum for prospective applications in optoelectronic devices.     

Structural and optical properties study of nanocrystalline Si (nc-Si) thin films deposited on porous aluminum by plasma enhanced chemical vapor deposition

In this paper we report detail investigation and correlation between micro-structural and optical properties of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure. The influence of the microstructure of the nc-Si thin films on their optical properties was investigated through an extensive characterization. The effect of anodisation currents on the microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). The optical constants (n and k as a function of wavelength) of the films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The silicon layer (SL) was modeled as a mixture of void, crystalline silicon and aluminum using the Bruggeman approximation. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties. A very bright photoluminescence (PL) was obtained and find to depend on anodisation current.     

天然与高温高压合成金刚石的RAMAN与PL光谱研究

天然、Fe-C(H)系及Ni-C系高温高压合成金刚石的晶体形态、Raman光谱及PL谱研究结果表明：Fe-C(H)系高温高压合成金刚石多为类似于天然金刚石的八面体形态,Ni-C系高温高压合成金刚石的晶体形态多为六八面体;天然金刚石的品级最佳、所含缺陷最少,Fe-C(H)系高温高压合成金刚石次之,Ni-C系高温高压合成金刚石品级最差、所含缺陷最多;金刚石在形成过程中,除结晶生长过程外,还应该存在“排杂”过程;人们在分析天然与HPHT合成金刚石形成过程之间的关联时,除要考虑两者形成的物质体系差异外,还应该充分关注时间、空间因素在金刚石形成过程中的意义。     

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.     

喇曼感生克尔效应光谱的琼斯矩阵分析

介绍喇曼感生克尔效应光谱(RIKES)的琼斯(Jones)矩阵分析方法.探测光束的传输强度不仅由所经过的每一个光学器件的琼斯矩阵所决定,而且还受到强的泵波在非线性介质样品中感生依赖于强度的二向色性和双折射(克尔效应)对琼斯矩阵的影响.同时计及样品和光学器件由强泵波作用下感生应力和其他外部产生的线双折射对喇曼感生克尔效应光谱观察的不利影响,导出测量系统的功率传输函数的完整表达式和喇曼感生克尔效应光谱的实现观察条件,最后简述以甲笨(C_7H_8)液体为试样的喇曼感生克尔效应光谱实验结果分析.     

中国拉曼光谱研究十年（1981—1991）

本文介绍了1981～1991年的十年间我国在有机化学、无机化学、生物化学及简正振动分析各领域里拉曼和表面增强拉曼光谱研究的概况。