微波等离子体化学气相沉积法制备C3N4薄膜的结构研究

采用微波等离子体化学气相沉积法,用高纯氮气(99.999%)和甲烷(99.9%)作反应气体,在单晶Si(100)基片上沉积C₃N₄薄膜.利用扫描电子显微镜观察薄膜形貌,表明薄膜由密排的六棱晶棒组成.X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β-C₃N₄和α-C₃N₄组成,并且这些结果与α-C₃N₄相符合较好.由虎克定律近似关 关键词： 3N₄')" href="#">C₃N₄ 微波等离子体化学气相沉积法 薄膜沉积     

FCVAD合成Ta-C(N)薄膜及其Raman和XPS分析

掺N非晶金刚石Ta—C(N)薄膜是合成β—C3N4研究中出现的一种新型固体薄膜材料,近年来由于其优异的电化学性能受到越来越多的关注。我们用磁过滤阴极真空弧等离子体沉积(FCVAD)方法在不同N2分压下,在Si衬底上合成了Ta—C(N)薄膜。Raman和XPS分析表明Ta—C：N薄膜中的N主要以C—N的方式与C结合。N2分压越大,N／C原子比越高,最高可达31．1％。但同时sp^3键含量越低,并且合成Ta-C：N薄膜的速度越慢。     

偏压对空心阴极放电等离子体溅射制备氮化碳薄膜的影响

利用空心阴极放电等离子体源在Si（100）单晶衬底上沉积了氮化碳薄膜．薄膜的表面形貌表明所得的薄膜非常的均匀光滑，用X光电子能谱、拉曼和红外吸收光谱对薄膜的结构、成分和化学键等进行了研究．在拉曼光谱中可以看到典型的G，D和C=N键的峰．当偏压为250V时．薄膜拉曼光谱中的D峰完全消失，此时薄膜的N／C比达到了0．81．通过对薄膜的XPS分析也表明薄膜中C—C，sp^2 CN和sp^3 CN键的组分也发生了明显的变化．当偏压为250V时薄膜的sp^3 CN相的含量达到了最大值为40％，同时氮含量也达到了最大值．实验结果给出了直接的证据：薄膜的结构模式可以通过改变偏压来得到控制．     

a—C：H（N）薄膜结构的X射互光电子能谱分析

采用直流－射频等离子增强化学汽相沉积技术制备ａ（Ｃ：Ｈ（Ｎ）薄膜，用Ｘ射互光电子能谱研究了混合气体中Ｎ２含量对薄膜成分与结构的影响，ａ－Ｃ：Ｈ（Ｎ）薄膜中含氮量可达９．０９％，对ａ－Ｃ：Ｈ（Ｎ）薄膜的Ｎｌｓ结合能谱的分析表明ａ－Ｃ：Ｈ（Ｎ）薄膜的结构是由Ｃ３Ｎ４相镶嵌在ｓｐ＾２键结合的Ｃｘ基体组成，其中Ｃ３Ｎ４相中Ｎ和Ｃ原子比接近４：３，不随薄膜中含Ｎ量改变，薄膜中Ｃ３Ｎ４相和ｓｐ＾３碳伯含量随Ｎ     

离子源辅助电子枪蒸发制备Ge1-xCx薄膜

应用电子枪蒸发纯Ge,考夫曼离子源辅助的方法在Ge基底上沉积了Ge1－xCx薄膜.制备过程中,Ge作为蒸发材料,CH4作为反应气体.通过改变CH4/(CH4+Ar)的气体流量比（G）,制备了G从40％到85％的Ge1－xCx薄膜.应用X射线衍射仪（XRD）测量了Ge1－xCx薄膜的晶体结构,使用傅里叶红外光谱仪（FTIR）测量了2～22 μm的光学透过率,X射线光电子能谱测试（XPS）计算得到C的含量随G的变化关系,用纳米压痕硬度测试计测量了Ge1－xCx薄膜的硬度,原子力显微镜（AFM）测量了G为60％,85％时Ge1－xCx薄膜的表面粗糙度.测试结果表明：制备的Ge1－xCx薄膜在不同的G值下均为无定形结构.折射率随着G值的增加而减小,在3.14～3.89之间可变,并具有良好的均匀性以及极高的硬度.     

直流辉光等离子体辅助热丝CVD法沉积金刚石薄膜

采用直流辉光等离子体助进热丝化学气相沉积（CVD）的方法，低温（550－620℃）沉积得到晶态金刚石薄膜，经X射线衍射谱（XRD），扫描电子显微镜（SEM）分析表明，稍高气压有利于金刚石薄膜的快速，致密生长。     

乙醇荧光光纤传感器的研究

将甲基丙烯酸3－（4′－N,N－二甲氨基）黄酮酯和丙烯酰胺,N,N’－亚甲基双丙烯酰胺共聚并共价键合在硅烷化的含乙烯基团的石英玻片上,制成了可测定乙醇的传感器。乙醇浓度在0％－90％（V／V）范围内,呈良好的线性关系。传感器对乙醇响应迅速,对50％乙醇测定的相对标准偏差为0．98％（n＝10）,传感器用于酒样中乙醇含量的测定,结果令人满意。     

在金属基片上激光沉积YBCO超导薄膜

介绍了在金属基片上激光沉积缓冲层和ＹＢａ２Ｃｕ３ｏ７－ｘ（ＹＢＣＯ）高温超导薄膜的研究结果。在带ｙｔｔｒｉａ－ｓｔａｂｉｌｉｚｅｄ－ｚｉｒｃｏｎｉａ（ＹＳＺ）缓冲层的ＮｉＣｒ合金基片上,激光原位沉积出ＹＢＣＯ超导薄膜,薄膜的零电阻转变温度度４８Ｋ,７７Ｋ时临界电流密度约为２００Ａ／ｃｍ＾２;缓冲层的取向可以通过选择适当的沉积参数来改善;用扫描隧道电子显微镜对ＹＢＣＯ薄膜的微观结构分析表明：完善的螺     

a-C∶H(N)薄膜结构的X射线光电子能谱分析

采用直流-射频等离子增强化学汽相沉积技术制备a-C∶H(N)薄膜，用X射线光电子能谱研究了混合气体中N₂含量对薄膜成分与结构的影响.a-C∶H(N)薄膜中含氮量可达9.09%.对a-C∶H(N)薄膜的C1s和N1s结合能谱的分析表明a-C∶H(N)薄膜的结构是由C₃N₄相镶嵌在sp²键结合的CN_x基体中组成.其中C₃N₄相中N和C原子比接近4∶3，不随薄     

时间域方法分析镍卟啉的共振拉曼强度与S2激发态结构

研究了入射光波长与S0→S2跃迁共振的情形下,卟啉镍合物（NiP)的振动拉曼光谱。用时间域方法计算了NiP的共振拉曼强度和吸收光谱。结果表明,相对于基态,S2态NiP的分子构型沿着v8和v2简正坐标有较大的位移。这些简正坐标主要涉及卟啉环的CαCm键和CβCβ键伸缩运动,以及CαCmCα变角运动。与基态相比,S2态的CβCβ、CαCm和CαN键分别增大0．27、0．14、0．07pm,而CαCβ键则减小0．20pm,与前人的赝势分子轨道计算（SPMO）结果相近。还从RR强度角度讨论了S2态的Jahn-Teller畸变。     

等离子增强原子层沉积低温生长GaN薄膜

采用等离子增强原子层沉积技术在低温下于单晶硅衬底上成功生长了Ga N多晶薄膜,利用椭圆偏振仪、低角度掠入射X射线衍射仪、X射线光电子能谱仪对薄膜样品的生长速率、晶体结构及薄膜成分进行了表征和分析.结果表明,等离子增强原子层沉积技术生长Ga N的温度窗口为210—270?C,薄膜在较高生长温度下呈多晶态,在较低温度下呈非晶态;薄膜中N元素与大部分Ga元素结合成N—Ga键生成Ga N,有少量的Ga元素以Ga—O键存在,多晶Ga N薄膜含有少量非晶态Ga_2O_3.     

Layer-by-layer deposition of Ti-4,4′-oxydianiline hybrid thin films

Features of the two thin-film techniques, atomic layer deposition (ALD) and molecular layer deposition (MLD), are combined to build up a stable novel inorganic-organic hybrid material of the (-Ti-N-C₆H₄-O-C₆H₄-N-)_n type, deposited from successive pulses of TiCl₄ and 4,4′-oxydianiline precursors. Depositions in the temperature range of 160-230 °C resulted in unstable films, while the films obtained in the temperature range of 250-490 °C were found stable in atmospheric air. The growth rate increased with increasing temperature, from 0.3 Å per cycle at 160 °C to 1.1 Å per cycle at 490 °C.     

离子束辅助反应制备的氧化铪薄膜特性

 采用电子束直接蒸发氧化铪、无辅助电子束反应蒸发和离子束辅助反应蒸发金属铪3种沉积方式制备了单层HfO₂薄膜，对样品的光学性能、结构特性以及激光损伤特性进行了研究。实验结果表明：通过反应沉积的方法可以有效减少缺陷产生并改善均匀性，施加离子辅助可以提高薄膜的折射率，在一定条件下还可以有效地降低吸收，但激光损伤阈值仍未达到直接采用氧化铪制备的水平；晶体结构方面，离子辅助条件下可以获得单斜相氧化铪薄膜，并且随着轰击能量的提高由(002)面的择优取向向(-111)面转变。     

离子束辅助淀积低温微光学元件红外宽带增透膜

简要叙述了锗基片微光学元件红外宽带减反膜的设计与制作。着重介绍了离子束辅助淀积制备该膜系的过程，给出了用该方法制作８～１２μｍ波段的减反膜的测试曲线，它具有峰值透过率高，在设计波长范围内的平均透过率大于９７％以上，膜层附着好，可以切割和擦洗，可以在室温和１００Ｋ低温下反复循环使用。     

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78\,nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5{\%} efficiency are fabricated.     

导流型热蒸发沉积制备微球表面聚酰胺酸涂层

 在自行研制的导流型热蒸发沉积装置上开展了微球表面聚酰胺酸（PAA）涂层制备工艺研究。探讨了单体原料处理和改变升温过程对沉积速率的影响。两种单体分别采用两个相互独立的蒸发源加热蒸发,使用两个晶振膜厚测量探头,通过对膜厚探头、样品盘和导流管端头三者的空间位置和对称关系的调整和实验标定,实现了两种单体近似等化学计量比的沉积。采用间歇性压电振动或敲击配合样品盘的旋转作为微球运动的激励方式,在聚-α-甲基苯乙烯（PAMS）微球上制备出均匀的表面质量好的PAA涂层。     

Patterned deposition by plasma enhanced spatial atomic layer deposition

An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al₂O₃ films from trimethyl aluminum and an He/O₂ plasma. This technique can be used for 2D patterned deposition in a single in‐line process by making use of switched localized plasma sources. It was observed that the sharpness of the patterns is primarily influenced by the concentration of reactive plasma species and by the dimensions of the plasma source. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Online deposition measurement and slag bubble behavior in the reduction zone of pulverized coal staged combustion

An online thermogravimetric measurement method of ash deposition was developed. Ash deposition and slag bubble in the reductive zone of pulverized coal staged combustion were investigated. Firstly, a steady pulverized coal staged combustion was achieved in an electrically heated down-fired furnace. Additionally, gas species, coal conversion, and particle size distribution were quantitatively measured. Secondly, real-time ash deposition rates at different temperatures (1100–1400 °C) were measured, and deposition samples were carefully collected with an N₂ protection method. The morphologies of collected samples were investigated through a scanning electron microscope. It was found that the deposited ash transformed from a porous layer composed of loosely bound particles to a solid layer formed by molten slag. Different behaviors of the slag bubble were observed, and bubble sizes were significantly affected by the deposition temperature. A deposition and bubble formation mechanism was proposed and used for modeling. Results showed that the proposed model well predicted the observed ash deposition and bubble formation process.     

Si基Sc膜的制备及结构分析

采用电子束镀膜方法在Si基底上制备了Sc膜,利用XRD,SEM分析了不同镀膜工艺条件下制备的Sc膜的形貌和结构。结果表明:基底温度在350～550 ℃时,薄膜主要由单质Sc组成,而且随着基底温度的升高,膜的颗粒尺寸增大,膜也变得更加致密;基底温度提高至650 ℃时,膜全部由ScSi化合物组成,膜变成颗粒状结构。沉积速率对低温时Sc膜的形貌与结构的影响不明显,颗粒尺寸随沉积速率的增大而增大,但物相结构基本没有发生变化;而在高温650 ℃时,沉积速率对膜的形貌与结构产生了很大的影响,随着沉积速率的增大,膜表面出现了大量微裂纹,而且较低的沉积速率有利于获得衍射峰单一的膜,增大沉积速率将会导致衍射峰数量明显增加。     

Preparation and characterization of the LiInSe2 thin films

Summary p-type LiInSe₂ films have been prepared by the rapid evaporation method onn-type Si andn-type GaP. Various characterization techniques such as the X-ray analysis, the Rutherford backscattering (RBS) analysis and the scanning electron microscopy were used to evaluated the quality of the films. The rectifications of the preliminary heterojunctions are demonstrated. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.