SOI大截面单模脊形X型分支波导的研制

报道了硅片直接键合（ＳＤＢ）ＳＯＩ大截面单模脊形互型分支波导的研制．对于波长为１．３μｍ的光，在θ＝２°小分支角时，这种分支波导的通道串音小于－２０ｄＢ，辐射损耗小于０．３ｄＢ．直通传输损耗小于０．８５ｄＢ／ｃｍ．     

GeO2—Sb2O3—K2O玻璃空芯光纤材料的光学特性研究

系统地研究了传输ＣＯ２激光用的新型光材料ＧｅＯ２－Ｓｂ２Ｏ３－Ｋ２Ｏ玻璃空芯光纤的光学特性。通过理论计算，得到了该材料ｎｒ＜１的波长范围，消光系数Ｋ和损耗数ａ，通过工艺和材料的选择，使ａ理论值达到０．０５ｄＢ／ｍ。同时讨论了ＨＥ１１，ＴＭ０１，ＴＥ０１模式损耗和频率的关系。     

SOI梯形大截面单模脊形波导的研制

报道了硅片直接键合ＳＯＩ单模梯形大截面脊形波导的研制，对于小长为１．３μｍ的光这种脊形波导的传输损耗小于０．８５ｄＢ／ｃｍ。     

GeO_2－Sb_2O_3－K_2O玻璃空芯光纤材料的光学特性研究

系统地研究了传输ＣＯ２激光用的新型光纤材料ＧｅＯ２－Ｓｂ２Ｏ３－Ｋ２Ｏ玻璃空芯光纤的光学特性。通过理论计算，得到了该材料ｎｒ＜１的波长范围，消光系数Ｋ和损耗系数ａ，通过工艺和材料的选择，使ａ理论值达到０．０５ｄＢ／ｍ。同时讨论了ＨＥ１１，ＴＭ０１，ＴＥ０１模式损耗和频率的关系。     

集成光学TM模偏振器的制作

用扩钛和质子交换相结合的方法在ｘ切ｙ传ＬｉＢｎＯ３衬底上制成了ＴＭ模集成光波导偏振器。质子交换区位于扩钛波导的末端两侧。在质子交换区域Δｎｅ〉０，Δｎ０〈０，因此ＴＥ模辐射进入衬底。偏振器工作于１．３μｍ波长，消光比优于４７ｄＢ，光纤０－波导－光纤插入损耗３．５ｄＢ。     

全固态瓦级连续波绿光激光器

报道一种ＬＤ端面泵浦Ｎｄ：ＹＶＯ４晶体，ＬＢＯ腔内倍频的全固态连续波绿光激光器，对ＬＢＯ采用Ｉ类非临界相位匹配，温度调谐，当泵光功率为６．２Ｗ时，获得了１．３Ｗ ＴＥＭ００模５３２ｍｍ连续波绿光输出，光－光转换效率达２１％，电一光转换效率达３％。     

LD泵浦Nd：BGO晶体的自调Q激光器

首次实现了ＬＫ泵浦Ｎｄ∶ＢＧＯ固体激光器的１．０６４μｍ的激光输出，泵浦阈值功率为２５ｍＷ，在连续运转状态下得到最大为４０ｍＷ的ＴＥＭ００模输出，光－光效率为１３．３％，根据法拉第磁光效庆理论，了ＬＤ泵浦Ｎｄ∶ＢＧＯ自调Ｑ激光器的各种参数，并研制成该激光器，在该器件中，作为损耗调制元件的磁光调制器就是绕有线圈的Ｎｄ∶ＢＧＯ晶体本身，实验在重复率为１ＫＨｚ的条件下得到了ＦＷＨＭ为１００ｎｓ的稳定脉冲     

GIANT MAGNETO-IMPEDANCE IN Fe-BASED SOFT FERROMAGNETIC RIBBONS

ＧＩＡＮＴＭＡＧＮＥＴＯ－ＩＭＰＥＤＡＮＣＥＩＮＦｅ－ＢＡＳＥＤＳＯＦＴＦＥＲＲＯＭＡＧＮＥＴＩＣＲＩＢＢＯＮＳＣｈｅｎＣｈｅｎＭｅｉＬｉａｎｇｍｏＤｅｐａｒｔｍｅｎｔｏｆＰｈｙｓｉｃｓ，ＳｈａｎｄｏｎｇＵｎｉｖｅｒｓｉｔｙ，Ｊｉｎａｎ２５０１００...     

1.5μm波导声光可调滤光器研究

对１．５μｍ波导型声光ＴＥ－ＴＭ模式转换光滤波器进行了研究。采用了可降低驱动功率的表面声波导结构。在１．５￣１．６μｍ波段实现了可调滤光，通带宽度小于２ｎｍ，达到９７￥以上转换率所需的射频驱动功率约８０ｍＷ（１９ｄＢｍ），器件总插入损耗约９ｄＢ。     

用有效折射率／有限元法设计1．55μmTi：LiNbO_3单模条波导及其方向耦合器

应用有效折射率／有限元法（ＥＩ－ＦＥＭ），考虑到ＬｉＮｂＯ３晶体和Ｔｉ扩散的各向异性，折射率增量与寻常光、非寻常光及波长色散的关系，设计了１．５５μｍ光波长下工作的ｚ切ｙ传播Ｔｉ：ＬｉＮｂＯ３单模条波导的制备参数，计算和分析了其单模特性、模式场分布及其变化规律．扩展了ＥＩ－ＦＥＭ，将其用于求解耦合波导系统，确定了方向耦合器的耦合长度及其波长色散特性．     

SOI-based trapezoidal waveguide with 45° microreflector for noncoplanar optical interconnect

A silicon on insulator (SOI)-based trapezoidal waveguide with a 45° reflector for noncoplanar optical interconnect is demonstrated. The proposed waveguide is fabricated on an orientation-defined (100) SOI substrate by using a single-step anisotropic wet-etching process. The optical performances of proposed waveguides are numerically and experimentally studied. Transmittance of -4.51 dB, alignment tolerance of ±20 μm, cross talk of -53 dB, and propagation loss of -0.404 dB/cm are achieved The proposed waveguide would be a basic element and suitable for the future intrachip optical interconnects.     

SOI波长信号分离器的研制

根据大截面单模脊形波导理论和双模干涉机制，在硅片直接键合、背面抛光减薄的ＳＯＩ材料上，通过氢氧化钾各向异性腐蚀的方法，成功地研制出ＳＯＩ波长信号分离器，在波长为１．３μｍ，其插入损耗为４．８１ｄＢ，串音小于－１８．６ｄＢ。     

Influence of the structure parameters on the gain and noise figure in silicon parametric amplifiers based on SOI Rib waveguides

Gain and Noise figure (NF) characteristics in dual-pump parametric amplifier based on silicon on insulator (SOI) Rib waveguides are numerically investigated in the presence of nonlinear losses. The impact of structure parameters of the silicon optical parametric amplifiers (SOPAs) on the gain and the NF are also analyzed. The results show that both the height and the width of the silicon on insulator (SOI) can affect the gain and the NF of SOPAs. 354 nm bandwidth (3 dB) and 8.135 maximum gain can be achieved by tailoring the structure parameters of the SOI rib waveguides. Moreover, the dispersion and the effective mode area of SOI are also analyzed.     

Optical amplification in Er/Yb silicate slot waveguide

Active slot waveguides were fabricated by embedding low-index Er/Yb silicate material in high-index silicon. A 1.7 dB signal enhancement at 1.53 μm in a 6 mm-long slot waveguide was observed through 1476 nm pumping. The peak Er emission cross-section is determined as 7.53×10(-21) cm2 and the excited Er ion fraction is 0.17. Our experiment shows that the defects in upper c-Si of Si-on-insulator (SOI) and deposited α-Si distorts photoluminescence spectrum and prevents further optical amplification. This negative effect can be partly corrected through annealing treatment, which allows better propagation of the pump light, therefore, stronger excitation in the sandwiched Er/Yb silicate. The defects also affect the 1.53 μm decay curve and are the dominant lifetime reduction mechanism in the active slot waveguide.     

溶胶-凝胶法制备SiO2-TiO2平板光波导工艺研究

采用溶胶-凝胶法制备了SiO₂-TiO₂平板光波导,计算了平板光波导通光条件,分析了硅/钛溶胶-凝胶材料的热性能,观测了平板光波导的结构形貌,并测试了其通光损耗。结果表明：经过200℃,30 min干燥处理的凝胶薄膜呈疏松多孔状态,对于非对称平板波导,存在芯层通光截止厚度,而且当SiO₂-TiO₂芯层厚度为0.5 μm时,SiO₂下包层厚度至少有6 μm才能防止1550 nm波长光泄露入单晶硅衬底中。制备的光波导对于1550 nm波长光传输损耗最小值为0.34 dB/cm。     

Grating couplers for thick SOI rib waveguides

The use of grating couplers in high index contrast waveguides like silicon on insulator (SOI) offers several advantages over other coupling approaches, including better alignment tolerances and allowing for wafer-scale testing. The grating couplers were developed for nanometric SOI waveguides (Si-wires), and recently also for micrometric rib waveguides. In this paper we review our work in fiber-to-chip grating couplers for thick SOI rib waveguides, where a coupling efficiency of ?2.2?dB was demonstrated experimentally. We also discuss the use of grating couplers to improve optical throughput (étendue) of a planar waveguide Fourier-Transform (FT) spectrometer implemented in thick rib waveguides.     

基于SOI非对称马赫曾德尔结构的集成矢量和微波光子移相器

设计和分析了一种基于SOI（绝缘体上的硅）脊型波导非对称马赫曾德尔结构的集成矢量和微波光子移相器。对于10 GHz的微波信号,设定非对称两臂的长度差为3 983μm时,其相应的时间延迟约为47 ps。分别在两臂上集成了一个热光可调谐可变光衰减器用于光学调谐,当衰减单元的折射率在0～6×10-3变化时,实现了10 GHz微波信号在0～180°的相位调谐。该器件尺寸小、结构紧凑,易于实现片上集成,在光控相控阵雷达中很有应用前景。     

Charge state switching of deep levels for low-power optical modulation in silicon waveguides

We demonstrate a method for the efficient modulation of optical wavelengths around 1550 nm in silicon waveguides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1×1 switch formed of an integrated p-i-n junction in an indium-doped silicon on insulator (SOI) waveguide provides 'normally-off' silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2.8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW.     

硅衬底上锗硅合金光波导的研制

报道锗硅合金在λ＝１．３μｍ的脊形单模光波导的设计，工艺及测量结果。这种光波导的传播损耗已达０．７ｄＢ／ｃｍ。脊形的高４－８μｍ，宽８－１２μｍ，均和单模光纤芯径相当，此外，其数值孔径在光波导的输入，输出端均能和单模光纤匹配，它已满足硅光集成对光波导的要求。文中最后报道了用这种锗硅合金光波导试制Ｙ分支器，并观察到二支分路输出的单模光斑。