磁随机存储器中垂直电流驱动的磁性隧道结自由层的磁化翻转

在基于磁性隧道结(Magnetic Tunneling Junction，MTJ)的磁随机存储器(Magnetoresistantive Random Access Memory，MRAM)中利用通过MTJ的垂直电流，实现信息写入的新方法，同时给出了基于此新方法的一种新的MRAM结构和驱动原理图，并分析了它的读和写操作的可行性具体过程. 关键词： 垂直电流 磁性隧道结 磁随机存储器     

Domain wall dynamics near the limit velocity in a cubic ferromagnet with induced magnetic anisotropy

A research has been conducted into the dynamics of the 180° domain wall in a cubic ferromagnet with induced magnetic anisotropy, this domain wall moving at a velocity close to the limit one. The Landau–Lifshits equation has been reduced to a modified double Sine–Gordon equation with the highest dispersion. A solution has been found which corresponds to the moving 180° domain wall. This paper has determined the dependencies of the velocity of the domain wall's stationary movement on the quality factor and on the ratio of the induced and the cubic magnetic anisotropy constants in slabs with the developed (0 0 1) and (0 1 1) surfaces.     

Current induced domain wall motion in nanostripes with perpendicular magnetic anisotropy

We report micromagnetic modeling results of current induced domain wall (DW) motion in magnetic devices with perpendicular magnetic anisotropy by solving the Landau-Lifschitz-Gilbert equation including adiabatic and non-adiabatic terms. A nanostripe model system with dimensions of 500 nm (L)×25 nm (W)×5 nm (H) was selected for calculating the DW motion and its width, as a function of various parameters such as non-adiabatic contribution, anisotropy constant (K_u), saturation magnetization (M_s), and temperature (T). The DW velocity was found to increase when the values of K_u and T were increased and the M_s value decreased. In addition, a reduction of the domain wall width could be achieved by increasing K_u and lowering M_s values regardless of the non-adiabatic constant value.     

Dynamics of the lattice of magnetic nanodipoles with cubic anisotropy

The 5 × 5 square lattices of magnetic dipoles with cubic crystallographic anisotropy were investigated by the computer simulation method. The conditions for implementing the random orientation of lattice configurations, each of which are characterized by a certain response to the influence of an external magnetic pulse, as well as by the established regime of the oscillation of the total magnetic moment under the influence of an alternating field, are revealed. Regular vibration modes with a doubled frequency and quasi-periodic and chaotic modes are detected. The dependence of the system response on the parameters of the magnetic field pulse is studied.     

Longitudinal complex magnetic susceptibility of superparamagnetic particles with cubic anisotropy

The dynamic susceptibility spectrum of single-domain particles with cubic anisotropy has been calculated within the continuous diffusion model throughout the total range of anisotropy-and damping-parameter variation. Fiz. Tverd. Tela (St. Petersburg) 40, 1898–1899 (October 1998)     

Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to . If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena.     

Tunnel magnetoresistance of magnetic junctions with cubic symmetry of the layers

A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching of the layers is analyzed for a magnetic field perpendicular to the initial magnetizations. In such a situation, an additional peak in the tunnel magnetoresistance ratio appears at the magnetic field value that is substantially lower than the anisotropy field of the soft layer.     

Magnetization reversal dependence on magnetic properties of a spin torque oscillator with in-plane anisotropy free layer and orthogonal polarizer

The effect of magnetic properties on magnetization dynamics is studied for a spin torque oscillator (STO) composed of a free layer with an in-plane magnetic anisotropy and a reference layer with a fixed out-of plane magnetization. A transition from damped to uniform oscillations is observed for a critical value of saturation magnetization M_S). In the uniform oscillations regime, the frequency is inversely proportional to M_S. Similarly, the critical current for achieving uniform oscillations is investigated as a function of free layer intrinsic properties. In a second part of the study, the magnetostatic field (H_m) from the reference layer is considered and it is revealed that the out-of plane component of magnetization has a strong dependence on H_m. For a particular configuration, H_m could reduce the out-of plane component maximizing thus the out-put signal of the STO.     

Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) comprising amorphous Co_70.5Fe_4.5Si₁₅B₁₀, possessing low saturation magnetization of 560 emu/cm³, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.     

Tunable magnetic anisotropy of antiferromagnetic superlattice and resultant exchange bias of ferromagnetic layer on it

Exchange biasing of ferromagnetic layer deposited on the antiferromagnetic superlattice was investigated in (Co₇₀Fe₃₀/Ru)_29.5/Ru/Co₉₀Fe₁₀ multilayers. Uniaxial magnetic anisotropy (K_AF) was induced and tuned in the antiferromagentic superlattice by uniaxial substrate bending method through the inverse effect of magnetostriction. The exchange bias increased and tended to be saturated with increasing the K_AF, while it was not observed at K_AF=0.     

Memory effects of induced magnetic anisotropy

It is shown that magnetic anisotropy induced in certain ferrimagnetic materials by thermomagnetic treatment can store information on the temeperature of thermal treatment and the strength of a magnetic field in which it was performed. It is also shown that a ferrimagnetic material can “memorize” several temperatures and field strengths of a few magnetic fields (both constant and variable). __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 40–46, March, 2007.     

Current hysteresis in magnetic tunnel junctions

A current hysteresis is detected in magnetic tunnel junctions of the ferromagnetic metal-nonmagnetic insulator-ferromagnetic metal type. The hysteresis is manifested in the formation of loops on the curves describing the dependence of the current through the junction on the applied voltage, as well as in the nonreproducibility of this dependence. This effect is caused by the influence of the spin-polarized current on the magnetic state of metallic layers: the current leads to a rearrangement of the domain structure under these conditions.     

磁性多层薄膜中交换各向异性研究

采用铁磁共振理论研究了自旋阀体系中交换各向异性场和两铁磁薄膜厚度对体系性质的影响,得到系统色散关系的解析表达式.研究表明:体系中存在的交换各向异性场H_E对声学模和光学模的共振场均有影响(其对声学模的影响较大).而且还发现声学模共振场随A,B层铁磁薄膜厚度的变化关系依赖于系统中交换各项异性场的强弱;相反,光学模共振场随两铁磁层厚度的增加始终增强.     

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque(SOT)effect.However,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging technique.Here,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field.In this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization orientations.Moreover,the feasibility of our method is widely evidenced in heavy metal/ferromagnet(Pt/Ni₂₀Fe₈₀ and W/Co₂₀Fe₆₀B₂₀)and the topological insulator/ferromagnet(Bi₂Se₃/Ni₂₀Fe₈₀).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.     

Coupled m-component fields with cubic anisotropy

The critical behavior at phase transitions of two coupled, m-component systems with cubic anisotropy is studied by a simplified model in which the fluctuations are partially considered. The phase transition could be a new fluctuation-induced first order transition into the anisotropic phase, or a new second order phase transition. Unlike in uncoupled systems, the second order phase transition could be into either the anisotropic or isotropic phase. As expected, upon suppression of fluctuations, all results reduce to those of mean field theory.     

Hard magnetic CoCr layer in ferromagnetic tunnel junctions

In magnetic tunnel junctions a highly spin-polarizing layer is usually exchange biased by an antiferromagnetic layer, an artificial antiferromagnetic layer system or a combination of both, while the magnetically soft layer is free to rotate. The use of a single layer of a hard magnetic material is rarely investigated up to now. In this paper, we present the electric and magnetic properties of tunnel junctions with a hard magnetic Co₈₃Cr₁₇ layer. The soft magnetic electrode consists of either a single Co layer or a Co/Ni₈₀Fe₂₀ bilayer. The magnetic anisotropy and coercive field H_C of the CoCr layer depend on its thickness and the kind of the bottom layer (Cu or Ta) and can vary from H_C=50–700 Oe. It is found that a thin Co cap layer also influences the hysteretic behavior. Furthermore, only small changes after annealing up to 450°C promise a high thermal stability for the application in magnetic tunnel junctions. Measurements of the tunnel magnetoresistance on large area junctions, however, show a strong magnetic coupling of the hard and soft electrodes.     

Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.     

Temperature memory of the induced magnetic anisotropy

Methods of higher harmonics applied to study the effects associated with the induced magnetic anisotropy (IMA) of ferro- and ferrimagnetic materials are considered. Physical processes causing the anisotropy and small value of these effects are analyzed. It is demonstrated that the IMA can remember the pressure at which it was formed.