共查询到18条相似文献,搜索用时 83 毫秒
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采用磁控溅射法分别在柔性PI衬底、柔性AZO衬底和柔性ITO衬底上制备CdS薄膜,并在干燥空气中以CdCl2为源380℃退火,分别研究了不同柔性衬底及退火工艺对CdS薄膜形貌、结构和光学性能的影响。研究结果表明:退火前在不同柔性衬底上的CdS薄膜形貌依赖于衬底类型,退火后CdS薄膜的晶粒再结晶,晶粒度增大明显,且不再依赖于衬底类型。不同柔性衬底上CdS薄膜均为立方相和六角相的混相结构,退火后,六角相比例增大,薄膜的结晶质量提高。透过率退火后改善明显,其中,在柔性AZO衬底上的CdS薄膜透过率超过80%。 相似文献
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采用真空热蒸发(VTE)的方法制备了CdS多晶薄膜,研究了不同衬底温度对其微观结构与光电性能的影响。结果显示,不同衬底温度下制备的CdS薄膜均属于六方相多晶结构且具有(002)择优取向;随着衬底温度的升高,(002)特征衍射峰强度增加,半高宽变小,相应薄膜结晶度增大;由CdS薄膜的透射光谱可知,在500~1 000nm波段平均透过率均超过80%,光学带隙随着衬底温度的升高而增大(2.44~2.56eV),表明真空热蒸发方法制备的CdS薄膜可以作为CIGS薄膜太阳电池的缓冲层。将真空热蒸发法制备CdS薄膜与磁控溅射法制备CIGS薄膜太阳电池相结合,在同一真空室内得到了CIGS薄膜太阳电池器件,为CIGS薄膜太阳电池的工业化推广提供了新途径。 相似文献
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采用磁控溅射法,在衬底温度300 ℃制备CdS薄膜,并选取370 ℃、380 ℃、390℃三个温度退火,获得在干燥空气和CdCl2源+干燥空气两种气氛下退火的CdS薄膜.通过研究热处理前后CdS薄膜的形貌、结构和光学性能表明,CdS薄膜在干燥空气中退火,晶粒度、表面粗糙度和可见光透过率变化不明显,光学带隙随退火温度的升高而增大; 在CdCl2源+干燥空气中退火,随退火温度的升高发生明显的再结晶和晶粒长大,表面粗糙度增大,可见光透过率和光学带隙随退火温度的升高而减小.分析得出: 上述性能的改变是由于不同的退火条件对CdS薄膜的再结晶温度和带尾态掺杂浓度改变的结果. 相似文献
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太阳电池中CdS多晶薄膜的微结构及性能 总被引:9,自引:1,他引:9
采用化学水浴法制备了CdS多晶薄膜,通过XRD,AFM,XPS和光学透过率谱等测试手段研究了CdS多晶薄膜生长过程中的结构和性能.结果表明,随着沉积的进行,薄膜更加均匀、致密,与衬底粘附力增强,其光学能隙逐渐增大,薄膜由无定形结构向六方(002)方向优化生长,同时出现了Cd(OH)2相.在此基础上,通过建立薄膜的生长机制与性能的联系,沉积出优质CdS多晶薄膜,获得了转化效率为13.38%的CdS/CdTe小面积电池. 相似文献
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报道了转换效率为14.6%~15.8%的多晶薄膜CdS/CdTe太阳电池的研制。用MOCVD法,在玻璃衬底上制备SnO_2和SnO_2:F薄膜,水溶液化学淀积法获得80~100nm厚的CdS薄膜和密堆积升华法制备5μm厚CdTe薄膜,CdS/CdTe太阳电池的短路电流密度高达24~25mA/cm ̄2。同时,对各层薄膜晶形和微观结构进行了分析研究。 相似文献
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CdS thin films have been prepared by chemical bath deposition. As-deposited films are cubic and show a sulfur deficiency.
From the transmittance and reflectance data analysis direct band gaps (Eg) ranging from 2.180 to 2.448 eV have been obtained. Air and vacuum annealed samples show a decrease in the band gap. The
refractive index (n) lies in the range 1.61–2.34. A dependence of band gap on composition has been observed and the possible
reasons are discussed. 相似文献
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用磁控溅射的方法在透明导电氧化物衬底上制备了CdS薄膜,制备时的衬底温度为30~200℃.X射线衍射测试结果表明在这一条件下制备的CdS薄膜是六角纤锌矿的多晶结构.扫描电子显微镜结果显示薄膜具有较好的晶体质量,这一结论也和拉曼光谱、紫外-可见吸收光谱、光致发光光谱的结果一致.拉曼光谱显示CdS薄膜内部的压应力随着制备温度的提高而增大. 相似文献
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The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as "optimized-annealed" are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150℃ while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and Ols spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films, Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature. 相似文献
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The choice of the bottom electrode or barrier layer plays an important role in determining the electrical and structural properties
of metal/ferroelectric/metal thin film capacitors. A substantial improvement of the electrical and structural properties of
the capacitors was found by using RuO2 as a bottom electrode. Electrical measurement on a capacitor with a structure of BaTiO3(246 nm)/RuO2 (200 nm)/SiO2/Si, where the BaTiO3 thin film was deposited at room temperature, showed a dielectric constant of around 15, leakage current density of 1.6 ×
10−7A/cm2 at 4 V, a dc conductivity of 9.8 × 1014S/cm, and a capacitance per unit area of 5.6 × 104pF/cm2. A similar structure but with polycrystalline BaTiO3 (273 nm) as the dielectric deposited at 680°C showed a dielectric constant of 290, leakage current density of 1.7 × 10−3A/cm2 at 4 V, a dc conductivity of 1.2 × 10−8 S/cm, and a capacitance per unit area of 9.4 × 105 pF/cm2. Scanning electron microscopy analysis on the films showed differences in the microstructure due to the use of different
bottom electrode materials, such as RuO2 or Pd. 相似文献
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Highly crystalline and transparent cadmium sulphide(CdS) films were deposited on glass substrate by electron beam evaporation technique.The structural and optical properties of the films were investigated.The X-ray diffraction analysis revealed that the CdS films have a hexagonal structure and exhibit preferred orientation along the(002) plane.Meanwhile,the crystalline quality of samples increased first and then decreased as the substrate temperature improved,which is attributed to the variation in film thickness.UV-vis spectra of CdS films indicate that the absorption edge becomes steeper and the band gap present fluctuation changes in the range of 2.389-2.448 eV as the substrate temperature increased.The photoluminescence peak of the CdS films was found to be broadened seriously and there only emerges a red emission band at 1.60 eV.The above results were analyzed and discussed. 相似文献