Polymer thin-film transistor based on a high dielectric constant gate insulator |
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| Authors: | L&# Wen, Peng Jun-Biao, Yang Kai-Xia, Lan Lin-Feng, Niu Qiao-Li, Cao Yong |
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| Affiliation: | Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China |
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| Abstract: | In this paper full polymer thin-film transistors (PTFTs) based onPoly (acrylonitrile) (PAN) as the gate dielectric and poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV)as the semiconductor layer were investigated by using differentchannel width/length ratios. Relatively high dielectric constant ofthe polymer dielectric layer (6.27) can remarkably reduce thethreshold voltage of the transistors to below -3V. Holefield-effect mobility of MEH-PPV of the PTFTs was about4.8×10-4cm2/Vs, and on/off current ratio was larger than102, which was comparable with that of transistors with widelyused Poly (4-vinyl phenol) (PVP) or SiO2 as gate dielectrics. |
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| Keywords: | Polymer Dielectric Fieldeffect transistor Field-effect mobility |
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