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Strain Tuning in Complex Oxide Epitaxial Films Using an Ultrathin Strontium Aluminate Buffer Layer
Authors:Di Lu  Yasuyuki Hikita  David J. Baek  Tyler A. Merz  Hiroki Sato  Bongju Kim  Takeaki Yajima  Christopher Bell  Arturas Vailionis  Lena F. Kourkoutis  Harold Y. Hwang
Affiliation:1. Department of Physics, Stanford University, Stanford, CA 94305, USA;2. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA;3. School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA;4. Department of Applied Physics Stanford University, Stanford, CA 94305, USA;5. Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277‐8561, Japan;6. Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113‐8656, Japan;7. H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, UK;8. Stanford Nano Shared Facilities, Stanford University, Stanford, CA 94305, USA;9. School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA;10. Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
Abstract:
Keywords:buffer layers  epitaxy  oxides  Sr3Al2O6  strain control  strain relaxation
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