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Electro‐Physical Properties of Gate‐Last Silicon MOSFETs with Low‐Temperature SiOxNy/HfOx Stack After Ultra‐Shallow Fluorine Implantation from RF Plasma |
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| Authors: | Robert Mroczyński Jakub Jasiński |
| Affiliation: | Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00‐662 Warsaw, Poland |
| Abstract: | |
| Keywords: | electrical characterization fluorine implantation high‐k dielectrics MOSFETs PECVD reactive magnetron sputtering |