The role of hydrogen in negative bias temperature instability of pMOSFET |
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| Authors: | Li Zhong-He Liu Hong-Xia Hao Yue |
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| Affiliation: | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | The NBTI degradation phenomenon and the role of hydrogen during NBT stressare presented in this paper. It is found that PBT stress can recover afraction of Vth shift induced by NBTI. However, this recovery isunstable. The original degradation reappears soon after reapplication of the NBTstress condition. Hydrogen-related species play a key role during a device's NBTdegradation. Experimental results show that the diffusion species areneutral, they repassivate Si dangling bond which is independent of the gatevoltage polarity. In addition to the diffusion towards gate oxide, hydrogendiffusion to Si-substrate must be taken into account for it also hasimportant influence on device degradation during NBT stress. |
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| Keywords: | negative bias temperature instability device degradation hydrogen diffusion interface traps |
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