| S吸附对SiC表面不同重构结构的影响 |
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| 引用本文： | 晁苗苗,杨莺. S吸附对SiC表面不同重构结构的影响[J]. 人工晶体学报, 2017, 46(7): 1283-1287 |
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| 作者姓名： | 晁苗苗 杨莺 |
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| 作者单位： | 西安理工大学电子工程系,西安,710048 |
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| 基金项目： | 国家自然科学基金(51207128;51677149)，特色研究项目(2016TS021) |
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| 摘 要： | SiC表面重构的发生会引起表面态密度增加,极大地影响SiC功率器件的性能.本文对4H/6H-SiC(0001)-Si端的(3×3)R30°和(3×3)重构结构及3C-SiC(0001)-Si端的(3×2)和(2×1)重构结构分别进行了S原子的吸附研究.结果表明:吸附S原子可以打开表面重构键,不同重构结构均有向体结构恢复的趋势.(3×3)R30°和(3×3)重构的最佳吸附率分别是1/2ML和1/3ML,S吸附对(3×3)R30°重构的作用更大.(3×2)重构表面在1/6ML下的H3位吸附、(2×1)重构表面在1/2ML下的B位吸附时吸附能最低.S钝化后,3C-SiC比4H/6H-SiC体系表面吸附能小,更稳定,重构结构恢复更理想.
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| 关 键 词： | SiC 吸附 表面重构, |
Effect of S Adsorption on Different Reconstructed Structures of SiC Surface |
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| CHAO Miao-miao,YANG Ying. Effect of S Adsorption on Different Reconstructed Structures of SiC Surface[J]. Journal of Synthetic Crystals, 2017, 46(7): 1283-1287 |
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| Authors: | CHAO Miao-miao YANG Ying |
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| Abstract: | SiC surface reconstruction will cause the increase of surface state densities, which can greatly affect the performance of SiC power devices.This paper aims to investigate the (3×3) R30° and (3×3) reconstructed structures on 4H/6H-SiC (0001)-Si terminal and the (3×2) and (2×1) reconstructed structures on 3C-SiC (0001)-Si terminal after S atoms adsorption.The results show that S adsorption can open the reconstruction bonds and that the different reconstructed structures have a tendency to recover to the ideal models.The optimum adsorption rate of (3×3)R30° is 1/2ML and that of (3×3) is 1/3ML.The adsorbed S atoms have a greater impact on the recovery of the (3×3)R30° reconstructed structure than that of (3×3).Additionally,H3 site is the best initial position and 1/6ML is the optimum adsorption rate for (3×2) 3C-SiC reconstructed structures,while B site is the best initial position and 1/2ML is the optimum adsorption rate for (2×1) 3C-SiC reconstructed structures.The surface adsorption energy of 3C-SiC reconstructed structures is smaller and the surface is more stable than that of 4H/6H-SiC.The recovery of 3C-SiC reconstructed structures is more desirable. |
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| Keywords: | SiC adsorption surface reconstruction |
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