| 薄膜结构性能变化中的"温度临界点" |
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| 引用本文： | 张丽伟,卢景霄,李瑞,冯团辉,靳锐敏,张宇翔,李维强,王红娟. 薄膜结构性能变化中的"温度临界点"[J]. 人工晶体学报, 2005, 34(5): 940-943 |
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| 作者姓名： | 张丽伟 卢景霄 李瑞 冯团辉 靳锐敏 张宇翔 李维强 王红娟 |
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| 作者单位： | 郑州大学材料物理教育部重点实验室,郑州,450052;新乡师范高等专科学校,新乡,453000;郑州大学材料物理教育部重点实验室,郑州,450052 |
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| 摘 要： | 本文先从理论角度说明了薄膜结构性能变化中存在"温度临界点",然后借助于XRD、Raman等测试仪器研究分析了Si薄膜、AZO薄膜在晶化过程、晶粒长大过程以及性能突变中的"温度临界点".结果显示:薄膜结构性能变化中确实存在"温度临界点";在"温度临界点"前后薄膜结构性能的变化规律曲线出现拐点.进而推论:薄膜的结构性能在随温度变化中"温度临界点"可能不止一个.
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| 关 键 词： | 温度临界点 薄膜结构 X射线衍射 拉曼光谱 |
| 文章编号： | 1000-985X（2005）05-0940-04 |
| 收稿时间： | 2005-05-24 |
| 修稿时间： | 2005-05-24 |
Critical Temperature Point in the Changing Process of Thin Films' Structure and Properties |
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| ZHANG Li-wei,LU Jing-xiao,LI Rui,FENG Tuan-hui,JIN Rui-min,ZHANG Yu-xiang,LI Wei-qiang,WANG Hong-juan. Critical Temperature Point in the Changing Process of Thin Films' Structure and Properties[J]. Journal of Synthetic Crystals, 2005, 34(5): 940-943 |
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| Authors: | ZHANG Li-wei LU Jing-xiao LI Rui FENG Tuan-hui JIN Rui-min ZHANG Yu-xiang LI Wei-qiang WANG Hong-juan |
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| Abstract: | This article illuminates the existence of a critical temperature point in the changing process of thin films' structure and properties from the theoretical perspective.And then with the aid of such measuring instruments as XRD and Raman,the critical temperature points in the process of crystalline of silicon thin films and growth of their grains and changing properties of AZO thin film were analyzesd.The findings of the experiment show that there exists a critical temperature point in the changing process of thin films' structure and properties;and that the changing laws are different before and after that point.Thus the conclusion has been made that there might exist more than one such critical temperature point. |
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| Keywords: | critical temperature point thin films' structure XRD Raman |
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