| Structural and Optical Characteristics of InGaN／GaN Multi-Quantum Wells Grown on α-and c-Plane Sapphire Substrates |
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| 作者姓名： | YUHong-Bo CHENHong LIDong-Sheng ZHOUJun-Ming |
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| 作者单位： | StateKeyLaboratoryforSurfacePhysics,InstituteofPhysics,ChineseAcademyofSciences,POBox603,Beijing100080 |
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| 摘 要： | We investigate the structural and optical properties of InGaN-based multi-quantum wells grown on α-c plane sapphire substrates by atomic force microscopy, high-resolution x-ray diffraction and temperature-dependent photoluminescence measurements. The multi-quantum wells grown on α-plane sapphire substrate show stronger exciton localization effect compared with that grown on the c-plane substrate, although the threading dislocation densities in the two samples are almost the same. We attribute the results to the different in-plane strain of quantum well grown on different substrate orientations at the same growth temperature. Since the excitonloca lization effect plays a key role to obtain high efficiency InGaN-based optoelectronics devices, the presented result should be emphasized.
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| 关 键 词： | 氮镓铟／氮化镓多量子阱 光学性质 结构性质 X光射线衍射分析 低压金属有机化学气相沉积法 |
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