Compound buried layer SOI high voltage device with a step buried oxide |
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| Authors: | Wang Yuan-Gang Luo Xiao-Rong Ge Rui Wu Li-Juan Chen Xi Yao Guo-Liang Lei Tian-Fei Wang Qi Fan Jie Hu Xia-Rong |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer. Furthermore, holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer. Consequently, the electric fields in both the thin LBO and the thick UBO are enhanced by these holes, leading to an improved breakdown voltage. The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer. Moreover, SBO CBL SOI can also reduce the self-heating effect. |
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| Keywords: | breakdown voltage step buried oxide compound buried layer self-heating effect |
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