Angle Integrated Photoemission Study of SmO0.85F0.15FeAs |
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| Authors: | OU Hong-Wei ZHAO Jia-Feng ZHANG Yan SHEN Da-Wei ZHOU Bo YANGLe-Xian HE Cheng CHEN Fei XU Min WU Tao CHEN Xian-Hui CHEN Yan FENG Dong-Lai |
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| Affiliation: | Department of Physics, Surface Physics Laboratory (National Key Laboratory), and Advanced Materials Laboratory, Fudan University, Shanghai 200433Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Abstract: | The electronic structure of the new superconductor SmO1-xFxFeAs (x=0.15) is studied by angle-integrated photoemission spectroscopy. Our data show a sharp feature very close to the Fermi energy, and a relative flat distribution of the density of states between 0.5eV and 3eV binding energy, which agrees well with the band structure calculations considering an antiferromagnetic ground state. No noticeable gap opening is observed at 12K below thesuperconducting transition temperature, indicating the existence of large ungapped regions in the Brillouin zone. |
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| Keywords: | 74.25.Jb 74.70.Dd 79.60.-i |
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