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Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones |
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| Authors: | Zhou Jing Lü Tian-Quan Xie Wen-Guang Cao Wen-Wu |
| Affiliation: | Center of Condensed Matter Science and Technology, Harbin Institute of Technology, Harbin 150001, China; Department of Physical Science and Technology, Heilongjiang University, Harbin 150080, China; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA |
| Abstract: | By taking into account structural transition zones near the lateraland thickness direction edges, this paper uses a modified transverseIsing model to study dielectric properties of a finite sizeferroelectric thin film in the framework of the mean-fieldapproximation. The results indicate that the influence of thelateral size on the dielectric susceptibility cannot be neglectedand lateral structural transition zones could be a crucial factorthat improves the mean susceptibility of the fixed size film. |
| Keywords: | ferroelectric thin film transverse Ising model dielectric properties |
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