| 膜厚对Zr,Al共掺杂ZnO透明导电薄膜结构和光电性能的影响 |
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| 引用本文： | 袁玉珍,王辉,张化福,刘汉法,刘云燕. 膜厚对Zr,Al共掺杂ZnO透明导电薄膜结构和光电性能的影响[J]. 人工晶体学报, 2010, 39(1): 169-173 |
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| 作者姓名： | 袁玉珍 王辉 张化福 刘汉法 刘云燕 |
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| 作者单位： | 山东理工大学理学院,淄博,255049;山东理工大学理学院,淄博,255049;山东理工大学材料科学与工程学院,淄博,255049 |
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| 基金项目： | 山东理工大学“功能材料”研究创新项目(CX0602) |
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| 摘 要： | 采用直流磁控溅射法在玻璃衬底上制备出Zr,Al共掺杂ZnO(AZZO)透明导电薄膜.用XRD和SEM分析和观察了薄膜样品的组织结构和表面形貌.研究表明:制备的AZZO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向.另外还研究了薄膜的结构、光学和电学性质随薄膜厚度的变化关系.当薄膜厚度为843 nm时,电阻率具有最小值1.18×10~(-3) Ω·cm,在可见光区(500～800 nm)平均透过率超过93;.
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| 关 键 词： | 磁控溅射 Zr,Al共掺杂ZnO 膜厚 透明导电薄膜, |
Effect of Film Thickness on Structure and Optoelectrical Properties of Zr, Al Co-doped ZnO Transparent Conducting Thin Films |
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| YUAN Yu-zhen,WANG Hui,,ZHANG Hua-fu,LIU Han-fa,LIU Yun-yan. Effect of Film Thickness on Structure and Optoelectrical Properties of Zr, Al Co-doped ZnO Transparent Conducting Thin Films[J]. Journal of Synthetic Crystals, 2010, 39(1): 169-173 |
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| Authors: | YUAN Yu-zhen WANG Hui ZHANG Hua-fu LIU Han-fa LIU Yun-yan |
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| Affiliation: | 1.School of Science;Shandong University of Technology;Zibo 255049;China;2.School of Materials Science and Engineering;China |
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| Abstract: | Al,Zr co-doped ZnO transparent conducting thin films were successfully prepared on glass substrates by DC magnetron sputtering at room temperature.Structure and surface morphology of Al,Zr co-doped ZnO thin films were investigated by XRD and SEM,respectively.The experimental results showed that all the films are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis.The structural and photoelectrical properties of the films were studied for different thickness in detail.The ... |
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| Keywords: | magnetron sputtering Zr Al co-doped ZnO film thickness transparent conducting films |
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