Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET |
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| Authors: | Tong Jian-Nong Zou Xue-Cheng Shen Xu-Bang |
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| Affiliation: | Centre for IC Design, Institute of Pattern Recognition and Artificial Intelligence, Huazhong University of Science and Technology, Wuhan 430074, China; Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China |
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| Abstract: | This paper presents the influences of structural parameters on the immunity of short-channel effects in grooved-gate n-channel metal－oxide－semiconductor field effect transistor (nMOSFET) using the simulator PISCES-II. The zero or negative groove-junction depth is beneficial to the improvement of the threshold characters, but there exists a limited range. The doping concentration of both substrate and channel has a significant influence on the threshold characters as well as on the device transconductance. Thus, the variation in these adjustable parameters may help to optimize the device design. |
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| Keywords: | grooved-gate MOSFET threshold voltage short channel effect junction depth |
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