| Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials |
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| 引用本文： | 殷桂琴 宁兆元 袁强华. Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials[J]. 中国物理快报, 2007, 24(12): 3532-3534 |
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| 作者姓名： | 殷桂琴 宁兆元 袁强华 |
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| 作者单位： | Department of Physics, Soochow University, Suzhou 215006 |
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| 基金项目： | Support by the National Natural Science Foundation of China under Grant No 10575074, and the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20050285007. |
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| 摘 要： | Low-density materials, commercially available hydrogensilsesquioxane （HSQ） offer a low dielectric constant. HSQ films can be obtained by spin on deposition （SOD）. In this work, low-dielectric-constant HSQ films are prepared by using D5 （decamethylcyclopentasiloxane） as sacrificiaJ porous materials. The dielectric constant of silica films significantly changes from 3.0 to 2.4. We report the structural aspects of the films in relation to their composition after annealed at 300℃, 400℃, and 500℃ for 1.5h in nitrogen ambient and annealed at 400℃ for 1.5h in vacuum. Si-OH appears after annealed at 400℃ for 1.5h in vacuum. The results indicate that the proper condition is in nitrogen ambient. Intensity of the Sill peak increases with the increasing temperature. Fourier transform infrared spectroscopy is used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds. Dielectric constant k is significantly lowered by annealing at 350℃ for 1.5h in nitrogen ambient. The I-V and C-V measurements are used to determine the dielectric constant, the electric resistivity and the breakdown electric field.
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| 关 键 词： | HSQ薄膜 电介质 多孔渗水 低密度材料 |
| 收稿时间： | 2007-05-03 |
Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials |
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| YIN Gui-Qin,NING Zhao-Yuan,YUAN Qiang-Hua. Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials[J]. Chinese Physics Letters, 2007, 24(12): 3532-3534 |
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| Authors: | YIN Gui-Qin NING Zhao-Yuan YUAN Qiang-Hua |
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| Affiliation: | Department of Physics, Soochow University, Suzhou 215006 |
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| Abstract: | Low-density materials, commercially available hydrogensilsesquioxane (HSQ) offer a low dielectric constant. HSQ films can be obtained by spin on deposition (SOD). In this work, low-dielectric-constant HSQ films are prepared by using D5 (decamethylcyclopentasiloxane) as sacrificial porous materials. The dielectric constant of silica films significantly changes from 3.0 to 2.4. We report the structural aspects of the films in relation to their composition after annealed at 300°C, 400°C, and 500°C for 1.5h in nitrogen ambient and annealed at 400°C for 1.5h in vacuum. Si--OH appears after annealed at400°C for 1.5h in vacuum. The results indicate that the proper condition is in nitrogen ambient. Intensity of the Si--H peak increases with the increasing temperature. Fourier transform infrared spectroscopy is used to identify the network structure and cage structure of Si--O--Si bonds and other possible bonds. Dielectric constant k is significantly lowered by annealing at 350°C for 1.5h in nitrogen ambient. The I--V and C--V measurements are used to determine the dielectric constant, the electric resistivity and the breakdown electric field. |
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| Keywords: | 77.84.-s 81.20.Fw 81.15.Rs |
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