Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices |
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| Authors: | Wang Liang-Ji Zhang Shu-Ming Zhu Ji-Hong ZhuJian-Jun Zhao De-Gang Liu Zong-Shun Jiang De-Sheng WangYu-Tian Yang Hui |
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| Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China |
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| Abstract: | To form low-resistance Ohmic contact to p-type GaN,InGaN/GaN multiple quantum well light emitting diode wafers aretreated with boiled aqua regia prior to Ni/Au (5~nm/5~nm) filmdeposition. The surface morphology of wafers and the current--voltagecharacteristics of fabricated light emitting diode devices areinvestigated. It is shown that surface treatment with boiledaqua regia could effectively remove oxide from the surface of the p-GaNlayer, and reveal defect-pits whose density is almost the same asthe screw dislocation density estimated by x-ray rocking curvemeasurement. It suggests that the metal atoms of the Ni/Au transparentelectrode of light emitting diode devices may diffuse into the p-GaNlayer along threading dislocation lines and form additional leakagecurrent channels. Therefore, the surface treatment time with boiledaqua regia should not be too long so as to avoid the increase ofthreading dislocation-induced leakage current and the degradation ofelectrical properties of light emitting diodes. |
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| Keywords: | GaN light emitting diode surface treatment leakage current |
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