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Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer
Authors:Yu Xin-Ge  Yu Jun-Sheng  Huang Wei  and Zeng Hong-Juan
Affiliation:State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China
Abstract:A top-contact organic field-effect transistor(OFET) is fabricated by adopting a pentacene/1,1’-bis(di-4tolylaminophenyl) cyclohexane(TAPC) heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode.The performances of the heterojunction OFET,including output current,field-effect mobility,and threshed voltage,are all significantly improved by introducing the MoO3 thin buffer layer.The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer,thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.
Keywords:organic field-effect transistor (OFET)   MoOz buffer layer   heterojunction structure   con-tact resistance
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