Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes |
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| Authors: | Adem Tataro&# lu |
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| Affiliation: | Department of Physics, Faculty Sciences, Gazi University, 06500, Ankara, Turkey |
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| Abstract: | In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of MS and MIS diode at ± 5 V are found to be 1.25×103 and 1.27×104, respectively. The main electrical parameters of MS and MIS diode, such as the zero-bias barrier height (Φ Bo) and ideality factor (n) are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. Also, the energy density distribution profile of the interface states (Nss) is obtained from the forward bias I-V. In addition, the values of series resistance (Rs) for the two diodes are calculated from Cheung's method and Ohm's law. |
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| Keywords: | Au/n-Si and Au/Si3N4/n-Si type diode I-V and C-V measurements ideality factor barrier height |
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