Dual-wavelength distributed Bragg reflector semiconductor laser based on composite resonant cavity |
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| Authors: | Chen Cheng Zhao Ling-Juan Qiu Ji-Fang Liu Yang Wang Wei Lou Cai-Yun |
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| Affiliation: | a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;b State Key Laboratory of Integrated Optoelectronics, Department of Electronics Engineering, Tsinghua University, Beijing 100084, China |
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| Abstract: | We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature. |
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| Keywords: | dual-wavelength laser distributed Bragg reflector quantum well intermixing |
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