Improving lithographic masks with the assistance of indentations |
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| Authors: | Guo Ying-Nan Li Xu-Feng Pan Shi Wang Qiao Wang Shuo Wu Yong-Kuan |
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| Affiliation: | a. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;b. School of Applied Science, Taiyuan University of Science and Technology, Taiyuan 030024, China |
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| Abstract: | Indentations etched on the output surface of a metallic mask are proposed to produce fine lithographic patterns with a resolution of 500 nm using the finite-difference time domain (FDTD) method. Such a designed mask is capable of enhancing near field lithography (NFL) resolution more than three times compared with the structure without indentations. The simulation results show that the interference disturbance between the adjacent lithographic channels can be eliminated efficiently by employing the indentations. As a straightforward consequence, the channel-to-channel interspaces can be shortened significantly, maintaining a uniform field distribution and high contrast. |
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| Keywords: | surface plasmons lithography finite-difference time domain (FDTD) method |
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