| Bulk—like contribution of tunnel magnetoresistance in magnetic tunnel junctions |
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| 引用本文： | 朱涛,詹文山,沈峰,张泽,X. H. Xiang,G. Landry,John Q. Xiao. Bulk—like contribution of tunnel magnetoresistance in magnetic tunnel junctions[J]. 中国物理, 2003, 12(6): 665-668. DOI: 10.1088/1009-1963/12/6/317 |
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| 作者姓名： | 朱涛 詹文山 沈峰 张泽 X. H. Xiang G. Landry John Q. Xiao |
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| 作者单位： | (1)Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (2)Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA; (3)State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (4)State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; Department of Physics and Astronomy, University of Delaware, |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 50171078). |
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| 摘 要： | We have demonstrated that the bulk-like contribution to tunnelling magnetoresistance (TMR) exists in the magnetic tunnel junctions, and is determined by the tunnelling characteristic length of the ferromagnetic electrodes. In the experiment, a wedge-shaped CoFe layer is inserted at the interface between the insulating barrier and the reference electrode. It is found that TMR ratio increases from 18% without CoFe layer to a saturation value of 26.5% when the CoFe thickness is about 2.3 nm. The tunnelling characteristic length, l_{tc}, can be obtained to be about 0.8 nm for CoFe materials.
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| 关 键 词： | 隧道磁致电阻效应 磁性隧道连接 铁磁体 磁性材料 试验研究 |
| 收稿时间： | 2003-01-08 |
Bulk-like contribution to tunnel magnetoresistance in magnetic tunnel junctions |
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| Zhu Tao,Zhan Wen-Shan,Shen Feng,Zhang Ze,X. H. Xiang,G. Landry and John Q. Xiao. Bulk-like contribution to tunnel magnetoresistance in magnetic tunnel junctions[J]. Chinese Physics, 2003, 12(6): 665-668. DOI: 10.1088/1009-1963/12/6/317 |
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| Authors: | Zhu Tao Zhan Wen-Shan Shen Feng Zhang Ze X. H. Xiang G. Landry John Q. Xiao |
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| Affiliation: | State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA; Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
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| Abstract: | We have demonstrated that the bulk-like contribution to tunnelling magnetoresistance (TMR) exists in the magnetic tunnel junctions, and is determined by the tunnelling characteristic length of the ferromagnetic electrodes. In the experiment, a wedge-shaped CoFe layer is inserted at the interface between the insulating barrier and the reference electrode. It is found that TMR ratio increases from 18% without CoFe layer to a saturation value of 26.5% when the CoFe thickness is about 2.3 nm. The tunnelling characteristic length, l_{tc}, can be obtained to be about 0.8 nm for CoFe materials. |
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| Keywords: | tunnelling magnetoresistance magnetic tunnel junctions |
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