首页 | 本学科首页   官方微博 | 高级检索  
     


Adding Remnant Magnetization and Anisotropic Exchange to Propeller‐like Single‐Molecule Magnets through Chemical Design
Authors:Kátia Cristina M. Westrup  Dr. Marie‐Emmanuelle Boulon  Dr. Pasquale Totaro  Dr. Giovana G. Nunes  Dr. Davi F. Back  Dr. Andersson Barison  Dr. Martin Jackson  Dr. Carley Paulsen  Prof. Dante Gatteschi  Dr. Lorenzo Sorace  Prof. Andrea Cornia  Prof. Jaísa F. Soares  Prof. Roberta Sessoli
Affiliation:1. Departamento de Química, Universidade Federal do Paraná, Centro Politécnico, 81530‐900, Curitiba‐PR (Brazil);2. Dipartimento di Chimica Ugo Schiff & UdR INSTM, Università degli Studi di Firenze, Via della Lastruccia?3–13, 50019 Sesto Fiorentino (Italy);3. Departamento de Química, Universidade Federal de Santa Maria, Camobi, 97105‐900, Santa Maria‐RS (Brazil);4. Institut Néel CNRS & Université J. Fourier, 25?rue des Martyrs, 38042 Grenoble (France);5. Current address: Faculty of Mathematics and Physics, Charles University, Ke Karlovu?3, 121 16 Prague (Czech Republic);6. Dipartimento di Scienze Chimiche e Geologiche & UdR INSTM, Università degli Studi di Modena e Reggio Emilia, Via G. Campi?183, 41125 Modena (Italy)
Abstract:The selective replacement of the central iron(III) ion with vanadium(III) in a tetrairon(III) propeller‐shaped single‐molecule magnet has allowed us to increase the ground spin state from S=5 to S=13/2. As a consequence of the pronounced anisotropy of vanadium(III), the blocking temperature for the magnetization has doubled. Moreover, a significant remnant magnetization, practically absent in the parent homometallic molecule, has been achieved owing to the suppression of zero‐field tunneling of the magnetization for the half‐integer molecular spin. Interestingly, the contribution of vanadium(III) to the magnetic anisotropy barrier occurs through the anisotropic exchange interaction with iron(III) spins and not through single ion anisotropy as in most single‐molecule magnets.
Keywords:iron  magnetic anisotropy  molecular magnetism  single‐molecule magnets  vanadium
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号