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High temperature characteristics of A1GaN/GaN high electron mobility transistors |
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| Authors: | Yang Li-Yuan Hao Yue Ma Xiao-Hua Zhang Jin-Cheng Pan Cai-Yuan Ma Ji-Gang Zhang Kai Ma Ping |
| Affiliation: | (a) Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China ; b) School of Technical Physics, Xidian University, Xi＇an 710071, China) |
| Abstract: | |
| Keywords: | A1GaN/GaN high electron mobility transistor high temperature characteristics traps current collapse |
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