| Cs3Bi2I9晶体的生长及辐射探测性能 |
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| 引用本文： | 孙啟皓,郝莹莹,张鑫,肖宝,介万奇,徐亚东. Cs3Bi2I9晶体的生长及辐射探测性能[J]. 人工晶体学报, 2021, 50(10): 1907-1912 |
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| 作者姓名： | 孙啟皓 郝莹莹 张鑫 肖宝 介万奇 徐亚东 |
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| 作者单位： | 西北工业大学材料学院,凝固技术国家重点实验室,辐射探测材料与器件工信部重点实验室,西安 710072 |
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| 基金项目： | 国家自然科学基金(51872228,U2032170,51802262);国家重点研发项目(2016YFE0115200,2016YFF0101301);陕西省自然科学基金(2019JQ-459,2020JC-12);陕西省自然科学基础研究计划(2019ZDLGY04-07);中央高校基础研究经费(3102019TS0408) |
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| 摘 要： | 采用布里奇曼法成功制备出大尺寸(φ15 mm×50 mm)、高质量的全无机金属卤化物类钙钛矿Cs3Bi2I9单晶。室温下,该晶体属于六方晶系,空间群为P63/mmc,密度为5.07 g/cm3,晶胞参数为a=b=0.840 nm,c=2.107 nm,熔点为632 ℃。采用粉末X射线衍射谱、紫外-可见-近红外漫反射光谱、I-V测试等表征该晶体的性质。制备Au/Cs3Bi2I9/Au三明治型器件结构,采用飞行时间技术测试Cs3Bi2I9晶体的载流子迁移率,得到Cs3Bi2I9晶体的电子迁移率为4.33 cm2·V-1·s-1。根据Hecht单载流子方程拟合得到Cs3Bi2I9晶体的载流子迁移率寿命积(μτ)为8.21×10-5 cm2·V-1,并且在500 V偏压下对α粒子的能量分辨率达到39%。
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| 关 键 词： | Cs3Bi2I9 辐射探测 晶体生长 金属卤化物钙钛矿 布里奇曼法 |
| 收稿时间： | 2021-05-31 |
Growth and Radiation Detection Properties of Cs3Bi2I9 Crystal |
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| SUN Qihao,HAO Yingying,ZHANG Xin,XIAO Bao,JIE Wanqi,XU Yadong. Growth and Radiation Detection Properties of Cs3Bi2I9 Crystal[J]. Journal of Synthetic Crystals, 2021, 50(10): 1907-1912 |
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| Authors: | SUN Qihao HAO Yingying ZHANG Xin XIAO Bao JIE Wanqi XU Yadong |
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| Affiliation: | Key Laboratory of Radiation Detection Materials and Devices, State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China |
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| Abstract: | The large size and high quality inorganic metal halide perovskite Cs3Bi2I9(φ15 mm×50 mm) single crystal was successfully prepared by Bridgman method. The crystal belongs to the hexagonal system (P63/mmc) at room temperature and the parameters are a=b=0.840 nm, c=2.107 nm. The density of Cs3Bi2I9 is 5.07 g/cm3 and the melting point is 632 ℃. The crystal was characterized by powder X-ray diffraction, UV-Vis-NIR diffuse reflectance spectra and I-V test. The device structure of Au/Cs3Bi2I9/Au is constructed to measure the carrier ability of Cs3Bi2I9 crystal by the time of flight (TOF) technique. The electron mobility of Cs3Bi2I9 crystal is obtained approximately of 4.33 cm2·V-1·s-1. The carrier mobility life product (μτ) of Cs3Bi2I9 crystal is obtained ~8.21×10-5 cm2·V-1 by the Hecht equation, with the energy resolution of 39% at 500 V. |
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| Keywords: | Cs3Bi2I9 radiation detection crystal growth metal halide perovskite Bridgman method |
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