Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure |
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| Affiliation: | 1.Key Laboratory of Wide Band-Gap Semiconductors and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;2.China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;3.China Aerospace Components Engineering Center, Beijing 100094, China |
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| Abstract: | The threshold voltage (Vth) of the p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated via Silvaco-Atlas simulations. The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ1,p, polarization charge density σb, and equivalent unite capacitance Coc. It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage Vth, and threshold voltage |Vth| increases with the reduction in p-GaN doping concentration and the work-function of gate metal. Meanwhile, the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |Vth|. Additionally, the parameter influencing output current most is the p-GaN doping concentration, and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×1016 cm-3 at VGS = -12 V and VDS = -10 V. |
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| Keywords: | p-channel GaN MOSFETs enhancement mode (E-mode) threshold voltage |
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