| 纳米柱高度对GaN基绿光LED光致发光谱的影响 |
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| 引用本文： | 黄华茂,黄江柱,胡晓龙,王洪. 纳米柱高度对GaN基绿光LED光致发光谱的影响[J]. 发光学报, 2016, 0(8): 967-972. DOI: 10.3788/fgxb20163708.0967 |
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| 作者姓名： | 黄华茂 黄江柱 胡晓龙 王洪 |
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| 作者单位： | 1. 华南理工大学广东省光电工程技术研究开发中心 物理与光电学院，广东 广州 510640; 广州现代产业技术研究院，广东 广州 511458;2. 华南理工大学广东省光电工程技术研究开发中心 物理与光电学院,广东 广州,510640 |
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| 基金项目： | “863”国家高技术研究发展计划(2014AA032609)，国家自然科学基金(61404050)，广东省科技计划(2014B010119002;2016A010103011)，广州市珠江科技新星专项(201610010038)，中央高校基本科研业务费专项资金(2015ZM131) |
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| 摘 要： | 纳米柱结构是释放高In组分InGaN/GaN绿光LED量子阱层应变的有效方法。本文采用自组装的聚苯乙烯微球掩模、感应耦合等离子体干法刻蚀和KOH溶液的湿法腐蚀,在GaN基绿光LED外延片上制备了3种高度的纳米柱结构,通过扫描电子显微镜观察纳米柱结构的形貌,并测试了常温和10 K低温时的光致发光谱(PL)。结果表明:应变释放对压电场的影响显著,使得纳米柱结构样品的内量子效率(IQE)提高,PL谱峰值波长蓝移;应变在量子阱中的不均匀分布还使得PL谱半高全宽(FWHM)展宽。与普通平面结构相比,高度为747 nm的纳米柱结构可使得IQE提升917%,PL谱峰值波长蓝移18 nm、FWHM展宽7 nm。另外,纳米柱结构样品的有源区有效面积减小可使得PL谱FWHM减小。
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| 关 键 词： | GaN基LED 绿光LED 纳米柱结构 光致发光谱 |
Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED |
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| Abstract: | Nanorod structure is an effective method to release the strain in multiple quantum wells of In-GaN/GaN green LED with high In component. In this paper, the natural lithography with self-assembled polystyrene microspheres, inductively coupled plasma dry etching and wet-etching using KOH aqueous solution were used to fabricate the nanorod structure with three heights in GaN-based green LED epitaxial wafers. The morphology was observed by scanning electron microscope, and the photoluminescence (PL) spectra at room temperature and 10 K low temperature were characterized. It is shown that the strain re-laxation significantly affect the piezoelectric field, thereby the nanorod structure leads to a promotion of the wafers'internal quantum efficiency (IQE) and blue-shift of the peak wavelengths of PL spectra, and the nonuniform distribution of the strain causes a broadening of the FWHM ( full width at half maxi-mum). Compared with the ordinary planar structure, the nanorod structure with the height of 747 nm in-duces an enhancement of 917% for the IQE, a blue-shift of 18 nm for the peak wavelengths of PL spec-trum, and a broadening of 7 nm for the FWHM. The results also indicate that the decreasing of effective active area of samples with nanorod structure may reduce the FWHM. |
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| Keywords: | GaN-based LED green LED nanorod structure photoluminescence spectrum |
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