| A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding |
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| 引用本文： | 梁庭 郭霞 关宝璐 郭晶 顾小玲 林巧明 沈光地. A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding[J]. 中国物理快报, 2007, 24(4): 1110-1113 |
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| 作者姓名： | 梁庭 郭霞 关宝璐 郭晶 顾小玲 林巧明 沈光地 |
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| 作者单位： | Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022 |
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| 基金项目： | Supported by the National Basic Research Program of China under Grant No 2006CB604902, the National High Technology Research and Development Program of China under Grant No 2006AA03A121 the National Natural Science Foundation of China under Grant No 60506012, the Fok Ying Tong Foundation under Grant No 101062, the Beijing Municipal Commission of Education （KZ200510005003, 05002015200504）, and the Excellent PhD Thesis Foundation of High Education of China （200542）. |
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| 摘 要： | A red-light AIGalnP light emitting diode （LED） is fabricated by using direct wafer bonding technology. Taking N-GaN wafer as the transparent substrate, the red-light LED is flip-chiped onto a structured silicon submount. Electronic luminance （EL） test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer. Current-voltage （I- V） measurement indicates that the bonding processes do not impact the electrical property of AIGalnP LED in the small voltage region （V 〈 1.5 V）. In the large voltage region （V 〉 1.5 V）, the I-V characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface.
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| 关 键 词： | 红光 光反射二极管 晶片 光电子 |
| 收稿时间： | 2006-12-13 |
| 修稿时间： | 2006-12-13 |
A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding |
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| LIANG Ting,GUO Xia,GUAN Bao-Lu,GUO Jing,GU Xiao-Ling,LIN Qiao-Ming,SHEN Guang-Di. A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding[J]. Chinese Physics Letters, 2007, 24(4): 1110-1113 |
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| Authors: | LIANG Ting GUO Xia GUAN Bao-Lu GUO Jing GU Xiao-Ling LIN Qiao-Ming SHEN Guang-Di |
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| Affiliation: | Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022 |
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| Abstract: | A red-light AlGaInP light emitting diode (LED) is fabricated by using direct wafer bonding technology. Taking N-GaN wafer as the transparent substrate, the red-light LED is flip-chiped onto a structured silicon submount. Electronic luminance (EL) test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer. Current--voltage (I--V) measurement indicates that the bonding processes do not impact the electrical property of AlGaInP LED in the small voltage region (V<1.5V). In the large voltage region (V>1.5V), the I--V characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface. |
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| Keywords: | 85.60.Jb 71.55.Eq 51.50.+v |
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