Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device |
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| Authors: | Zhang You-Run Zhang Bo Li Ze-Hong Lai Chang-Jin Li Zhao-Ji |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | This paper proposes a thermal analytical model of current gain forbipolar junction transistor-bipolar static induction transistor(BJT-BSIT) compound device in the low current operation. It alsoproposes a best thermal compensating factor to the compound devicethat indicates the relationship between the thermal variation rateof current gain and device structure. This is important for the designof compound device to be optimized. Finally, the analytical modelis found to bein good agreement with numerical simulation and experimentalresults. The test results demonstrate that thermal variation rate ofcurrent gain is below 10% in 25 °--85 ° and 20{%} in-55 °du--25 °. |
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| Keywords: | bipolar junctiontransistor-bipolar static induction transistor thermal analyticmodel current gain |
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