p‐Type Dye‐Sensitized Solar Cells with a CdSeS Quantum‐Dot‐Sensitized NiO Photocathode for Outstanding Short‐Circuit Current |
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| Authors: | Wenping Kong Shengjun Li Zeng Chen Chaochao Wei Wei Li Tao Li Ying Yan Xiyang Jia Binghua Xu Weifeng Zhang |
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| Affiliation: | Department Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics & Electronic, Henan University, Kaifeng, People's Republic of China |
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| Abstract: | CdSeS quantum dots (QDs) are firstly introduced into a NiO photocathode for photocathodic dye‐sensitized solar cells (p‐DSCs). The optimized sample exhibits a short‐circuit density (14.68 mA cm?2) and power conversion efficiency (1.02%) that are almost one order of magnitude higher than the reported value of p‐QDSCs. Steady‐state photoluminescence and time‐resolved photoluminescence measurements indicate that the photoexcited holes can be almost completely injected from CdSeS QDs into the valence band of NiO. At the same time, it can be observed from electrochemical impedance spectra measurements. |
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| Keywords: | CdSeS quantum dots dye‐sensitized solar cells nickel oxide p‐type, photocathodes |
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