Recent developments in CVD growth and applications of 2D transition metal dichalcogenides |
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| Authors: | Hui Zeng Yao Wen Lei Yin Ruiqing Cheng Hao Wang Chuansheng Liu Jun He |
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| Affiliation: | 1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China2. Wuhan Institute of Quantum Technology, Wuhan 430206, China3. Hubei Luojia Laboratory, Wuhan 430079, China4. Shanxi Normal University, Taiyuan 030031, China |
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| Abstract: | Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating electronic energy band structures, rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest, and show great potential in electronic, optoelectronic, spintronic and valleytronic fields. Stacking 2D TMDs have provided unprecedented opportunities for constructing artificial functional structures. Due to the low cost, high yield and industrial compatibility, chemical vapor deposition (CVD) is regarded as one of the most promising growth strategies to obtain high-quality and large-area 2D TMDs and heterostructures. Here, state-of-the-art strategies for preparing TMDs details of growth control and related heterostructures construction via CVD method are reviewed and discussed, including wafer-scale synthesis, phase transition, doping, alloy and stacking engineering. Meanwhile, recent progress on the application of multi-functional devices is highlighted based on 2D TMDs. Finally, challenges and prospects are proposed for the practical device applications of 2D TMDs. |
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| Keywords: | two-dimensional (2D) semiconductor transition metal dichalcogenides (TMDs) chemical vapor deposition (CVD) heterostructures device applications |
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