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Universal Scaling of Intrinsic Resistivity in Two‐Dimensional Metallic Borophene |
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| Authors: | Jin Zhang Jia Zhang Dr. Liujiang Zhou Cai Cheng Dr. Chao Lian Jian Liu Prof. Sergei Tretiak Dr. Johannes Lischner Prof. Feliciano Giustino Prof. Sheng Meng |
| Affiliation: | 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Sciences, Beijing, P. R. China;2. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, P. R. China;3. Theoretical Division, Center for Nonlinear Studies and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA;4. Departments of Materials, Physics, and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, London, UK;5. Department of Materials, University of Oxford, Oxford, UK |
| Abstract: | Two‐dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first‐principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well‐described using the Bloch–Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch–Grüneisen temperature is nearly fixed at 100 K. This work suggests that monolayer boron can serve as intriguing platform for realizing tunable two‐dimensional electronic devices. |
| Keywords: | Bloch– Grü neisen model borophene electron– phonon coupling intrinsic electrical resistivity |