| 纳米NiAl-Ni和Ni3Al-Ni合金的低温电阻特性 |
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| 引用本文： | 郑海涛, 代飞, 张莉莉, 等. 纳米NiAl-Ni和Ni3Al-Ni合金的低温电阻特性[J]. 强激光与粒子束, 2018, 30: 124101. doi: 10.11884/HPLPB201830.180251 |
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| 作者姓名： | 郑海涛 代飞 张莉莉 罗江山 林伟 王凯 易勇 雷海乐 |
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| 作者单位： | 1.西南科技大学 材料科学与工程学院, 四川 绵阳 621010;2.中国工程物理研究院 激光聚变研究中心, 四川 绵阳 621900 |
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| 基金项目： | 国家自然科学基金项目11674291 |
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| 摘 要： | 为了深入理解纳米Al-Ni合金低温下的电子输运过程，使用自主研发的电磁感应加热-自悬浮定向流法制备出Al，Ni和Al-Ni纳米合金粉末，并采用真空热压设备将纳米粉末压制成纳米晶块体，利用自主搭建的低温热电测量系统研究了Al-Ni纳米合金的电阻率随温度(8~300 K)的变化规律。研究结果表明：Al-Ni纳米合金由于形成有序晶相而仍然与Al，Ni纳米晶一样，电阻率随温度的降低而降低。纳米Ni3Al-Ni和NiAl-Ni在居里温度点附近出现了电阻率随温度变化的极大值点，因为单质Ni的影响，Ni3Al-Ni的居里温度比粗晶Ni3Al提高了20 K。由于磁子-电子散射作用和声子-电子散射作用，纳米Ni3Al-Ni，NiAl-Ni和Ni的电阻率在低温下(8~40 K)与温度呈T2和T4关系。
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| 关 键 词： | 磁子/声子-电子散射 电阻率 纳米Al-Ni合金 晶界散射 |
| 收稿时间： | 2018-09-28 |
| 修稿时间： | 2018-11-03 |
Resistivity of nanostructure NiAl-Ni and Ni3Al-Ni alloys at low temperature |
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| Zheng Haitao, Dai Fei, Zhang Lili, et al. Resistivity of nanostructure NiAl-Ni and Ni3Al-Ni alloys at low temperature[J]. High Power Laser and Particle Beams, 2018, 30: 124101. doi: 10.11884/HPLPB201830.180251 |
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| Authors: | Zheng Haitao Dai Fei Zhang Lili Luo Jiangshan Lin Wei Wang Kai Yi Yong Lei Haile |
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| Affiliation: | 1. School of Material Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, China;2. Research Center of Laser Fusion, CAEP, Mianyang 621900, China |
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| Abstract: | Al, Ni and Al-Ni alloy powders were prepared by the flow-levitation method through electromagnetic induction heating, and the nano-powders were compressed into nanostructured samples by vacuum hot pressure sintering furnace. We used the four-point probe method to measure the values of electrical resistivity (ρ) of the nanostructured aluminum, nickel and Al-Ni alloy samples at temperature (T) ranging from 8 K to 300 K to explore the relationship between the electrical resistivity and temperature. The results show that the resistivity of nanostructured Al, Ni and Al-Ni alloys decreased with the decrease of temperature due to the formation of ordered crystalline phase. The nanostructured Ni3Al-Ni and NiAl-Ni alloys showed a maximum value of resistivity to temperature slope near the Curie temperature, and the Curie temperature of Ni3Al-Ni was 20 K higher than that of coarse-grained Ni3Al because of the influence of nickel elemental. The resistivity of nanosturctured Ni3Al-Ni, NiAl-Ni, and Ni show T2 and T4 law at low temperature (8-40 K) due to magneton-electron scattering and phonon-electron scattering. |
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| Keywords: | magneton phonon-electron scattering electrical resistivity Al-Ni alloys grain boundary scattering |
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