An improved EEHEMT model for kink effect on AlGaN/GaN HEMT |
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| Affiliation: | a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China |
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| Abstract: | In this paper, a new current expression based on both the direct currect (DC) characteristics of the AlGaN/GaN high election mobility transistor (HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I-V, S-parameter, and radio frequency (RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-μm wide (Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT (10× 125 μm)). The improved large signal model simulates the I-V characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data. |
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| Keywords: | AlGaN/GaN HEMT kink effect tanh EEHEMT model |
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