| Structural Characterization and Photoluminescent Properties of Zn1—xMgxO Films on Silicon |
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| 作者姓名： | 邹璐 叶志镇 等 |
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| 作者单位： | StateKeyLaboratoryofSiliconMaterial,ZhejiangUniversity,Hangzhou310027 |
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| 摘 要： | Zn1-xMgxO films have been grown on silicon at various substrate temperatures by pulsed laser deposition.The structural and photoluminescent properties of films as a function of substrate temperature have been studied.The optimized substrate temperature is 650℃.The x-ray diffraction spectra indicate that the films are highly C-axis oriented,and no phase separation is observed.The crystal grain size of the films is about 100nm as examined by atomic force microscopy.The cross-sectional transmission electron microscopy verified the C-axis orientation of the Zn1-xMgxO.Thesr films showed ultraviolet photoluminescence at room temperature.The near-band-edge emission peak of the Zn1-xMgxO film deposited at 600℃ has a blueshift (0.40eV) larger than that of the film deposited at 500℃ (0.33eV).The ratio of the near-band-edge to defect level peak intensity is as large as 159.
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| 关 键 词： | 薄膜 结构特征 光致发光性质 |
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