| Deposition of Er：A12O3 Films and Photoluminescence Characteristics |
| |
| 作者姓名： | 李成仁 宋昌烈 李淑凤 饶文雄 |
| |
| 作者单位： | [1]DepartmentofPhysics,LiaoningNormalUniversity,Dalian116029 [2]DepartmentofPhysics‘DalianUniversityofTechnology,Dalian116024 |
| |
| 摘 要： | Er^3 -doped Al2O3 films were deposited on silicon substrates by reactive closed-field unbalanced magnetron sput-tering. The process parameters, such as target bias voltage, substrate bias voltage, O2 gas flows, sputtering gas pressure, were studied. The 1.53μm photoluminescence characteristics from Er^3 were measured. The relations among the PL peak intensity, annealing temperatures, and pump power were experimentally investigated.
|
| 关 键 词： | Er：A12O3薄膜 二氧化二铝薄膜 铒掺杂 薄膜沉积 光致发光 光学性质 |
| 本文献已被 维普 等数据库收录！ |
|
