首页 | 本学科首页   官方微博 | 高级检索  
     


Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor
Abstract:To obtain thermal contact resistance(TCR) between the vertical double-diffused metal-oxide-semiconductor(VDMOS) and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat sink is measured under different contact forces, and the TCR can be extracted nondestructively from the derived relationship. Finally, the experimental results are compared with the simulation results.
Keywords:
本文献已被 CNKI 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号