| Comparative study of the electrical properties of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes |
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| 作者姓名： | Adem Tataroglu |
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| 作者单位： | Department of Physics, Faculty Sciences, Gazi University, 06500, Ankara, Turkey |
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| 基金项目： | Project supported by Gazi University Scientific Research Project （BAP）, FEF. 05/2012-15. |
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| 摘 要： | In this paper,the electrical parameters of Au/n-Si(MS) and Au/Si3N4/n-Si(MIS) Schottky diodes are obtained from the forward bias current-voltage(I-V) and capacitance-voltage(C-V) measurements at room temperature.Experimental results show that the rectifying ratios of the MS and MIS diodes at±5 V are found to be 1.25 × 103 and 1.27 × 104,respectively.The main electrical parameters of the MS and MIS diodes,such as the zero-bias barrier height(ΦBo) and ideality factor(n),are calculated to be 0.51eV(I-V),0.53eV(C-V),and 4.43,and 0.65eV(I-V),0.70eV(C-V),and 3.44,respectively.In addition,the energy density distribution profile of the interface states(Nss) is obtained from the forward bias I-V,and the series resistance(Rs) values for the two diodes are calculated from Cheung's method and Ohm's law.
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| 关 键 词： | Au/n-Si and Au/Si3N4/n-Si type diodes I-V and C-V measurements ideality factor barrier height |
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