| Abstract: | We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors(HEMTs).A 200 W NH_3/N_2 remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration,which results in a decrease in sheet resistance and an increase in output current by 20-30%.Improved current slump,suppressed gate leakage current,and improved Schottky contact properties are also achieved by using low-damage nitride-based plasma treatment.It is found that NH_3/N_2 remote plasma treatment is a promising technique for GaN-based HEMTs to modulate the surface conditions and channel properties. |
