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Comparison of electrical characteristic between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes |
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| Affiliation: | [1]Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China; [2]School of Physics, Shandong University, Jinan 250100, China |
| Abstract: | Al（Ga）N/GaN, Schottky barrier height, current-transport mechanism, leakage current |
| Keywords: | Al（Ga）N/GaN Schottky barrier height current-transport mechanism leakage current |
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