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| SiC单晶片的取向研磨 | |
| 引用本文： | 赵树峰,陈治明,潘盼,王欢欢. SiC单晶片的取向研磨[J]. 人工晶体学报, 2010, 39(2): 365-368 |
| 作者姓名： | 赵树峰 陈治明 潘盼 王欢欢 |
| 作者单位： | 西安理工大学电子工程系,西安,710048 |
| 摘 要： | 优质晶体生长常常需要籽晶或衬底偏离常规结晶取向.为便于按任意偏向角度研磨晶片,本实验室设计并应用了晶片取向研磨夹具及相应的研磨工艺.本文介绍了该夹具和工艺的工作原理、技术要点以及对技术指标的鉴定情况.测试结果表明,研磨取向误差范围可控制在5;之内,研磨片厚度偏差小于5 μm、粗糙度Ra=0.12 μm. |
| 关 键 词： | SiC单晶片 取向研磨 偏向晶片, |
Oriented Lapping of SiC Wafers |
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| ZHAO Shu-feng,CHEN Zhi-ming,PAN Pan,WANG Huan-huan. Oriented Lapping of SiC Wafers[J]. Journal of Synthetic Crystals, 2010, 39(2): 365-368 | |
| Authors: | ZHAO Shu-feng CHEN Zhi-ming PAN Pan WANG Huan-huan |
| Affiliation: | ZHAO Shu-feng,CHEN Zhi-ming,PAN Pan,WANG Huan-huan (Department of Electronic Engineering,Xi'an University of Technology,Xi'an 710048,China) |
| Abstract: | Off-oriented crystal seeds or substrates are often required for growth of high quality crystals.In order to prepare crystal wafers with any needed off-orientation,a special tool and the related lapping technology were designed and applied in our laboratory.In this paper,the principle and the key points were discussed,and the experimental results for identifying the technology were presented.The test results show that the lapping deviation in crystal orientation is less than 5%,the thickness error is less th... |
| Keywords: | SiC wafer orinted lapping off-oriented crystal wafer |
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