Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation |
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| Affiliation: | 1. Microelectronics Department, North China University of Technology, Beijing 100041, China;2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;3. School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | The growth process of GeOx films formed by plasma post-oxidation (PPO) at room temperature (RT) is investigated using angle-resolved x-ray photoelectron spectroscopy (AR-XPS). The experimental results show that the distributions of the Ge4+ states, a mixture of the Ge2+ and Ge3+ states, and the Ge1+ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge1+ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor (MOS) field-effect transistor (CMOSFET) devices. |
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| Keywords: | Ge plasma post-oxidation MOS XPS |
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